Keyphrases
Activation Energy
33%
Arrhenius Plot
33%
Cadmium Telluride
100%
Cadmium Telluride Films
33%
Chemical Vapor Deposition Processes
33%
Compound Semiconductors
33%
Computational Fluid Dynamics
33%
Deposition Conditions
33%
Deposition Experiment
100%
Deposition Simulation
100%
Deposition Uniformity
33%
Dimethylcadmium
33%
Dynamic Mode
33%
Dynamic numerical Simulation
33%
Glass Substrate
33%
Growth Rate
66%
Inline Process
100%
Material Utilization
66%
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Moving Substrate
33%
Numerical Simulation
33%
Orifice
33%
Process Requirements
33%
Restricted Flow
33%
Semiconductor Layer
33%
Static Experiment
33%
Static Mode
33%
Static-dynamic
33%
Engineering
Activation Energy
33%
Arrhenius Plot
33%
Chemical Vapor Deposition
100%
Compound Semiconductor
33%
Computational Fluid Dynamics
33%
Computer Simulation
33%
Deposition Condition
33%
Deposition Process
33%
Glass Substrate
33%
Good Agreement
33%
Material Utilization
66%
Mode Dynamic
33%
Mols
33%
Moving Substrate
33%
Numerical Modeling
33%
Orifice
33%
Process Requirement
33%
Reactant
33%
Theoretical Value
33%
Vapor Deposition
100%
Material Science
Activation Energy
25%
Cadmium
100%
Chemical Vapor Deposition
100%
Compound Semiconductor
25%
Computational Fluid Dynamics
25%
Film
25%
Orifice
25%
Vapor Phase Deposition
25%
Chemical Engineering
Cadmium Telluride
100%
Metallorganic Chemical Vapor Deposition
100%