Subthreshold behavior of junctionless silicon nanowire transistors from atomic scale simulations

Keyphrases

• Atomic Simulation 100%
• Banded Structure 50%
• Charge Carrier Transport 50%
• Current-voltage Characteristics 100%
• Density Functional Theory 50%
• Dopant 50%
• Electrostatic Control 50%
• Gate Length 100%
• Junction-less 100%
• Junctionless Transistor 50%
• N-channel 50%
• Nanowire Transistor 50%
• Nanowires 50%
• P-channel 50%
• Self-consistency 50%
• Self-consistent Calculation 50%
• Silicon Nanowire Transistor 100%
• Silicon Nanowires (SiNWs) 50%
• Small Length Scale 50%
• Subthreshold Activity 100%
• Subthreshold Slope 100%
• Theory Framework 50%
• Wire Diameter 50%

Material Science

• Carrier Transport 25%
• Charge Carrier 25%
• Current Voltage Characteristics 50%
• Density 25%
• Doping (Additives) 25%
• Nanowire 100%
• Silicon 100%
• Transistor 100%