Preparation of zinc oxide nanowires on silicon carbide fibers

Hu Zhang, Ling Wang, Jianfeng Tong, Xiaosu Yi

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)


In this paper, a low temperature (< 90°C) solution growth technique was used for the fabrication of ZnO nanowires on silicon carbide fibers. The ZnO nanowire grew in a two-step process. The parameters for the growth of nanowires with varying lengths and diameters were optimized. It is shown that ZnO nanowires were grown on silicon carbide fibers, with diameters of 50-200 nm and length of 3 μm.

Original languageEnglish
Title of host publication2011 Chinese Materials Conference
PublisherElsevier Ltd.
Number of pages5
ISBN (Print)9781627485838
Publication statusPublished - 2012
Externally publishedYes

Publication series

NameProcedia Engineering
ISSN (Print)1877-7058


  • Fiber
  • Nanowire
  • Silicon carbide
  • Sol
  • ZnO

ASJC Scopus subject areas

  • Engineering (all)


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