In this paper, a low temperature (< 90°C) solution growth technique was used for the fabrication of ZnO nanowires on silicon carbide fibers. The ZnO nanowire grew in a two-step process. The parameters for the growth of nanowires with varying lengths and diameters were optimized. It is shown that ZnO nanowires were grown on silicon carbide fibers, with diameters of 50-200 nm and length of 3 μm.
|Title of host publication||2011 Chinese Materials Conference|
|Number of pages||5|
|Publication status||Published - 2012|
- Silicon carbide
ASJC Scopus subject areas
- Engineering (all)