Modulation of the band gap of tungsten oxide thin films through mixing with cadmium telluride towards photovoltaic applications

A. H.Y. Hendi, M. F. Al-Kuhaili, S. M.A. Durrani, M. M. Faiz, A. Ul-Hamid, A. Qurashi, I. Khan

Research output: Journal PublicationArticlepeer-review

28 Citations (Scopus)

Abstract

Tungsten oxide (WO3) is a wide band gap semiconductor that has received extensive interest in optoelectronic applications. However, its band gap is too large for applications based on the absorption of visible light. To that end, we have modulated the band gap of WO3 thin films through mixing it with cadmium telluride (CdTe). The films were prepared by thermal evaporation of WO3 containing controlled concentrations of CdTe (0–25%). The obtained films showed a continuous reduction in the band gap from 3.30 eV (0% CdTe) to 2.47 eV (25% CdTe). Photocurrent response increased significantly with the increase of CdTe concentration due to the enhancement of the light absorption in the long wavelength region. The results obtained support the potential of these alloyed films for photovoltaic applications.

Original languageEnglish
Pages (from-to)148-154
Number of pages7
JournalMaterials Research Bulletin
Volume87
DOIs
Publication statusPublished - 1 Mar 2017
Externally publishedYes

Keywords

  • Band gap
  • Cadmium telluride
  • Photocurrent
  • Tungsten oxide

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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