Modulation of the band gap of tungsten oxide thin films through mixing with cadmium telluride towards photovoltaic applications

A. H.Y. Hendi; M. F. Al-Kuhaili; S. M.A. Durrani; M. M. Faiz; A. Ul-Hamid; A. Qurashi; I. Khan

doi:10.1016/j.materresbull.2016.11.032

Modulation of the band gap of tungsten oxide thin films through mixing with cadmium telluride towards photovoltaic applications

A. H.Y. Hendi, M. F. Al-Kuhaili, S. M.A. Durrani, M. M. Faiz, A. Ul-Hamid, A. Qurashi, I. Khan

Research output: Journal Publication › Article › peer-review

30 Citations (Scopus)

Abstract

Tungsten oxide (WO₃) is a wide band gap semiconductor that has received extensive interest in optoelectronic applications. However, its band gap is too large for applications based on the absorption of visible light. To that end, we have modulated the band gap of WO₃ thin films through mixing it with cadmium telluride (CdTe). The films were prepared by thermal evaporation of WO₃ containing controlled concentrations of CdTe (0–25%). The obtained films showed a continuous reduction in the band gap from 3.30 eV (0% CdTe) to 2.47 eV (25% CdTe). Photocurrent response increased significantly with the increase of CdTe concentration due to the enhancement of the light absorption in the long wavelength region. The results obtained support the potential of these alloyed films for photovoltaic applications.

Original language	English
Pages (from-to)	148-154
Number of pages	7
Journal	Materials Research Bulletin
Volume	87
DOIs	https://doi.org/10.1016/j.materresbull.2016.11.032
Publication status	Published - 1 Mar 2017
Externally published	Yes

Keywords

Band gap
Cadmium telluride
Photocurrent
Tungsten oxide

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.materresbull.2016.11.032

Cite this

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title = "Modulation of the band gap of tungsten oxide thin films through mixing with cadmium telluride towards photovoltaic applications",

abstract = "Tungsten oxide (WO3) is a wide band gap semiconductor that has received extensive interest in optoelectronic applications. However, its band gap is too large for applications based on the absorption of visible light. To that end, we have modulated the band gap of WO3 thin films through mixing it with cadmium telluride (CdTe). The films were prepared by thermal evaporation of WO3 containing controlled concentrations of CdTe (0–25%). The obtained films showed a continuous reduction in the band gap from 3.30 eV (0% CdTe) to 2.47 eV (25% CdTe). Photocurrent response increased significantly with the increase of CdTe concentration due to the enhancement of the light absorption in the long wavelength region. The results obtained support the potential of these alloyed films for photovoltaic applications.",

keywords = "Band gap, Cadmium telluride, Photocurrent, Tungsten oxide",

author = "Hendi, {A. H.Y.} and Al-Kuhaili, {M. F.} and Durrani, {S. M.A.} and Faiz, {M. M.} and A. Ul-Hamid and A. Qurashi and I. Khan",

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doi = "10.1016/j.materresbull.2016.11.032",

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AU - Hendi, A. H.Y.

AU - Al-Kuhaili, M. F.

AU - Durrani, S. M.A.

AU - Faiz, M. M.

AU - Ul-Hamid, A.

AU - Qurashi, A.

AU - Khan, I.

PY - 2017/3/1

Y1 - 2017/3/1

N2 - Tungsten oxide (WO3) is a wide band gap semiconductor that has received extensive interest in optoelectronic applications. However, its band gap is too large for applications based on the absorption of visible light. To that end, we have modulated the band gap of WO3 thin films through mixing it with cadmium telluride (CdTe). The films were prepared by thermal evaporation of WO3 containing controlled concentrations of CdTe (0–25%). The obtained films showed a continuous reduction in the band gap from 3.30 eV (0% CdTe) to 2.47 eV (25% CdTe). Photocurrent response increased significantly with the increase of CdTe concentration due to the enhancement of the light absorption in the long wavelength region. The results obtained support the potential of these alloyed films for photovoltaic applications.

AB - Tungsten oxide (WO3) is a wide band gap semiconductor that has received extensive interest in optoelectronic applications. However, its band gap is too large for applications based on the absorption of visible light. To that end, we have modulated the band gap of WO3 thin films through mixing it with cadmium telluride (CdTe). The films were prepared by thermal evaporation of WO3 containing controlled concentrations of CdTe (0–25%). The obtained films showed a continuous reduction in the band gap from 3.30 eV (0% CdTe) to 2.47 eV (25% CdTe). Photocurrent response increased significantly with the increase of CdTe concentration due to the enhancement of the light absorption in the long wavelength region. The results obtained support the potential of these alloyed films for photovoltaic applications.

KW - Band gap

KW - Cadmium telluride

KW - Photocurrent

KW - Tungsten oxide

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DO - 10.1016/j.materresbull.2016.11.032

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SN - 0025-5408

VL - 87

SP - 148

EP - 154

JO - Materials Research Bulletin

JF - Materials Research Bulletin

ER -

Modulation of the band gap of tungsten oxide thin films through mixing with cadmium telluride towards photovoltaic applications

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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