Cluster ion implantation: A molecular dynamics study

Sigeo Ihara, Satoshi Itoh, James C. Greer

Research output: Journal PublicationConference articlepeer-review

2 Citations (Scopus)


The collisions of 5.7 keV silicon atom and clusters with a silicon surface are simulated by molecular dynamics. Using a parameter surveillance system for simultaneous execution of multiple simulations on parallel/distributed computers, we have studied the impact dependence of cluster ions on the surface. The channeling effect of the implanted atoms is inevitable in the single-atom case, but is suppressed by the macroscopic vibrations of the surface in the cluster-ion case.

Original languageEnglish
Pages (from-to)91-95
Number of pages5
JournalMaterials Science in Semiconductor Processing
Issue number1-2
Publication statusPublished - Mar 2000
Externally publishedYes
Event1999 E-MRS Spring Meeting Symposium L: Ab Inito Approches to Microelectronics Materials and Process Modelling - Strasbourg, France
Duration: 1 Jun 19994 Jun 1999


  • Channeling
  • Cluster
  • Ion implantation
  • Molecular dynamics
  • Parallel/distributed computer

ASJC Scopus subject areas

  • Materials Science (all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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