Cluster ion implantation: A molecular dynamics study

Sigeo Ihara; Satoshi Itoh; James C. Greer

doi:10.1016/S1369-8001(00)00012-3

Cluster ion implantation: A molecular dynamics study

Sigeo Ihara, Satoshi Itoh, James C. Greer

Research output: Journal Publication › Conference article › peer-review

2 Citations (Scopus)

Abstract

The collisions of 5.7 keV silicon atom and clusters with a silicon surface are simulated by molecular dynamics. Using a parameter surveillance system for simultaneous execution of multiple simulations on parallel/distributed computers, we have studied the impact dependence of cluster ions on the surface. The channeling effect of the implanted atoms is inevitable in the single-atom case, but is suppressed by the macroscopic vibrations of the surface in the cluster-ion case.

Original language	English
Pages (from-to)	91-95
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	3
Issue number	1-2
DOIs	https://doi.org/10.1016/S1369-8001(00)00012-3
Publication status	Published - Mar 2000
Externally published	Yes
Event	1999 E-MRS Spring Meeting Symposium L: Ab Inito Approches to Microelectronics Materials and Process Modelling - Strasbourg, France Duration: 1 Jun 1999 → 4 Jun 1999

Keywords

Channeling
Cluster
Ion implantation
Molecular dynamics
Parallel/distributed computer

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S1369-8001(00)00012-3

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title = "Cluster ion implantation: A molecular dynamics study",

abstract = "The collisions of 5.7 keV silicon atom and clusters with a silicon surface are simulated by molecular dynamics. Using a parameter surveillance system for simultaneous execution of multiple simulations on parallel/distributed computers, we have studied the impact dependence of cluster ions on the surface. The channeling effect of the implanted atoms is inevitable in the single-atom case, but is suppressed by the macroscopic vibrations of the surface in the cluster-ion case.",

keywords = "Channeling, Cluster, Ion implantation, Molecular dynamics, Parallel/distributed computer",

author = "Sigeo Ihara and Satoshi Itoh and Greer, {James C.}",

note = "Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 1999 E-MRS Spring Meeting Symposium L: Ab Inito Approches to Microelectronics Materials and Process Modelling ; Conference date: 01-06-1999 Through 04-06-1999",

year = "2000",

month = mar,

doi = "10.1016/S1369-8001(00)00012-3",

language = "English",

volume = "3",

pages = "91--95",

journal = "Materials Science in Semiconductor Processing",

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publisher = "Elsevier Ltd.",

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}

TY - JOUR

T1 - Cluster ion implantation

T2 - 1999 E-MRS Spring Meeting Symposium L: Ab Inito Approches to Microelectronics Materials and Process Modelling

AU - Ihara, Sigeo

AU - Itoh, Satoshi

AU - Greer, James C.

PY - 2000/3

Y1 - 2000/3

N2 - The collisions of 5.7 keV silicon atom and clusters with a silicon surface are simulated by molecular dynamics. Using a parameter surveillance system for simultaneous execution of multiple simulations on parallel/distributed computers, we have studied the impact dependence of cluster ions on the surface. The channeling effect of the implanted atoms is inevitable in the single-atom case, but is suppressed by the macroscopic vibrations of the surface in the cluster-ion case.

AB - The collisions of 5.7 keV silicon atom and clusters with a silicon surface are simulated by molecular dynamics. Using a parameter surveillance system for simultaneous execution of multiple simulations on parallel/distributed computers, we have studied the impact dependence of cluster ions on the surface. The channeling effect of the implanted atoms is inevitable in the single-atom case, but is suppressed by the macroscopic vibrations of the surface in the cluster-ion case.

KW - Channeling

KW - Cluster

KW - Ion implantation

KW - Molecular dynamics

KW - Parallel/distributed computer

UR - http://www.scopus.com/inward/record.url?scp=2642582787&partnerID=8YFLogxK

U2 - 10.1016/S1369-8001(00)00012-3

DO - 10.1016/S1369-8001(00)00012-3

M3 - Conference article

AN - SCOPUS:2642582787

SN - 1369-8001

VL - 3

SP - 91

EP - 95

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1-2

Y2 - 1 June 1999 through 4 June 1999

ER -

Cluster ion implantation: A molecular dynamics study

Abstract

Keywords

ASJC Scopus subject areas

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