Abstract
The collisions of 5.7 keV silicon atom and clusters with a silicon surface are simulated by molecular dynamics. Using a parameter surveillance system for simultaneous execution of multiple simulations on parallel/distributed computers, we have studied the impact dependence of cluster ions on the surface. The channeling effect of the implanted atoms is inevitable in the single-atom case, but is suppressed by the macroscopic vibrations of the surface in the cluster-ion case.
| Original language | English |
|---|---|
| Pages (from-to) | 91-95 |
| Number of pages | 5 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 3 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - Mar 2000 |
| Externally published | Yes |
| Event | 1999 E-MRS Spring Meeting Symposium L: Ab Inito Approches to Microelectronics Materials and Process Modelling - Strasbourg, France Duration: 1 Jun 1999 → 4 Jun 1999 |
Keywords
- Channeling
- Cluster
- Ion implantation
- Molecular dynamics
- Parallel/distributed computer
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering