Properties of the interfacial layer in the high-k gate stack and transistor performance

G. Bersuker; J. Peterson; J. Barnett; A. Korkin; J. H. Sim; R. Choi; B. H. Lee; J. Greer; P. Lysaght; H. R. Huff

Properties of the interfacial layer in the high-k gate stack and transistor performance

G. Bersuker, J. Peterson, J. Barnett, A. Korkin, J. H. Sim, R. Choi, B. H. Lee, J. Greer, P. Lysaght, H. R. Huff

Research output: Contribution to conference › Paper › peer-review

13 Citations (Scopus)

Abstract

Effect of the ALD HfO ₂ film on the structural and electrical properties of the underlying interfacial SiO ₂ layer is discussed. It is shown that the k value of the interfacial layer is increased, which may be caused by the removal of oxygen atom from the oxide region near its interface with the Si substrate. The data indicates that the low temperature chemical oxide may be less stable than thermal oxide with respect to oxygen removal. Chemical oxide interfacial layer exhibits higher density of the fixed charge compared with thermal oxide that correlates to lower mobility observed in the gate stack with the chemical oxide interface.

Original language	English
Pages	141-145
Number of pages	5
Publication status	Published - 2005
Externally published	Yes
Event	207th ECS Meeting - Quebec, Canada Duration: 16 May 2005 → 20 May 2005

Conference

Conference	207th ECS Meeting
Country/Territory	Canada
City	Quebec
Period	16/05/05 → 20/05/05

ASJC Scopus subject areas

General Engineering

Cite this

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title = "Properties of the interfacial layer in the high-k gate stack and transistor performance",

abstract = "Effect of the ALD HfO 2 film on the structural and electrical properties of the underlying interfacial SiO 2 layer is discussed. It is shown that the k value of the interfacial layer is increased, which may be caused by the removal of oxygen atom from the oxide region near its interface with the Si substrate. The data indicates that the low temperature chemical oxide may be less stable than thermal oxide with respect to oxygen removal. Chemical oxide interfacial layer exhibits higher density of the fixed charge compared with thermal oxide that correlates to lower mobility observed in the gate stack with the chemical oxide interface.",

author = "G. Bersuker and J. Peterson and J. Barnett and A. Korkin and Sim, {J. H.} and R. Choi and Lee, {B. H.} and J. Greer and P. Lysaght and Huff, {H. R.}",

year = "2005",

language = "English",

pages = "141--145",

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TY - CONF

T1 - Properties of the interfacial layer in the high-k gate stack and transistor performance

AU - Bersuker, G.

AU - Peterson, J.

AU - Barnett, J.

AU - Korkin, A.

AU - Sim, J. H.

AU - Choi, R.

AU - Lee, B. H.

AU - Greer, J.

AU - Lysaght, P.

AU - Huff, H. R.

PY - 2005

Y1 - 2005

N2 - Effect of the ALD HfO 2 film on the structural and electrical properties of the underlying interfacial SiO 2 layer is discussed. It is shown that the k value of the interfacial layer is increased, which may be caused by the removal of oxygen atom from the oxide region near its interface with the Si substrate. The data indicates that the low temperature chemical oxide may be less stable than thermal oxide with respect to oxygen removal. Chemical oxide interfacial layer exhibits higher density of the fixed charge compared with thermal oxide that correlates to lower mobility observed in the gate stack with the chemical oxide interface.

AB - Effect of the ALD HfO 2 film on the structural and electrical properties of the underlying interfacial SiO 2 layer is discussed. It is shown that the k value of the interfacial layer is increased, which may be caused by the removal of oxygen atom from the oxide region near its interface with the Si substrate. The data indicates that the low temperature chemical oxide may be less stable than thermal oxide with respect to oxygen removal. Chemical oxide interfacial layer exhibits higher density of the fixed charge compared with thermal oxide that correlates to lower mobility observed in the gate stack with the chemical oxide interface.

UR - http://www.scopus.com/inward/record.url?scp=31844457142&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:31844457142

SP - 141

EP - 145

T2 - 207th ECS Meeting

Y2 - 16 May 2005 through 20 May 2005

ER -

Properties of the interfacial layer in the high-k gate stack and transistor performance

Abstract

Conference

ASJC Scopus subject areas

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