Switching limits of top-gated carbon nanotube field-effect transistors

A. Sanchez-Soares, C. Gilardi, Q. Lin, T. Kelly, S. K. Su, G. Fagas, J. C. Greer, G. Pitner, E. Chen

Research output: Journal PublicationArticlepeer-review


The performance limits of carbon nanotube field-effect transistors (CNFETs) based on a recently reported process are studied by computational techniques at temperatures between 300 K and 4 K. The impact of band-to-band tunneling (BTBT) and source-to-drain tunneling (SDT) is examined for devices with varying gate length through the use of simulations based on the non-equilibrium Green's function (NEGF) formalism, and calibrated to measurements. Additionally, the case of junctionless chemical doping profiles is analyzed in contrast to electrostatic doping recently reported for test structures. The switching limits of CNFETs are further explored for devices based on carbon nanotubes (CNTs) with more favorable electronic structures.

Original languageEnglish
Article number108624
JournalSolid-State Electronics
Publication statusPublished - Apr 2023


  • Carbon nanotubes
  • NEGF

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


Dive into the research topics of 'Switching limits of top-gated carbon nanotube field-effect transistors'. Together they form a unique fingerprint.

Cite this