Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

Hirofumi Akagi; Tatsuya Yamagishi; Nadia Mei Lin Tan; Yuji Miyazaki; Shin Ichi Kinouchi; Masato Koyama

doi:10.1109/TIA.2014.2331426

Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

Hirofumi Akagi, Tatsuya Yamagishi, Nadia Mei Lin Tan, Yuji Miyazaki, Shin Ichi Kinouchi, Masato Koyama

Research output: Journal Publication › Article › peer-review

117 Citations (Scopus)

Abstract

This paper describes the design, construction, and testing of a 750-V 100-kW 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiC-MOSFET/SBD dual modules. The maximum conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be as high as 98.7% at 42-kW operation. The overall power loss at the rated-power (100 kW) operation, excluding the gate-drive and control circuit losses, is divided into the conduction and switching losses produced by the SiC modules, the iron and copper losses due to magnetic devices, and the other unknown loss. The power-loss breakdown concludes that the sum of the conduction and switching losses is about 60% of the overall power loss and that the conduction loss is nearly equal to the switching loss at the 100-kW and 20-kHz operation.

Original language	English
Article number	6839038
Pages (from-to)	420-428
Number of pages	9
Journal	IEEE Transactions on Industry Applications
Volume	51
Issue number	1
DOIs	https://doi.org/10.1109/TIA.2014.2331426
Publication status	Published - 1 Jan 2015
Externally published	Yes

Keywords

Bidirectional isolated dc-dc converters
SiC-MOSFET
conversion efficiency
dual-active-bridge configuration

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TIA.2014.2331426

Cite this

@article{7926dba173ca4a3ca2176961075b8c95,

title = "Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules",

abstract = "This paper describes the design, construction, and testing of a 750-V 100-kW 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiC-MOSFET/SBD dual modules. The maximum conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be as high as 98.7% at 42-kW operation. The overall power loss at the rated-power (100 kW) operation, excluding the gate-drive and control circuit losses, is divided into the conduction and switching losses produced by the SiC modules, the iron and copper losses due to magnetic devices, and the other unknown loss. The power-loss breakdown concludes that the sum of the conduction and switching losses is about 60% of the overall power loss and that the conduction loss is nearly equal to the switching loss at the 100-kW and 20-kHz operation.",

keywords = "Bidirectional isolated dc-dc converters, SiC-MOSFET, conversion efficiency, dual-active-bridge configuration",

author = "Hirofumi Akagi and Tatsuya Yamagishi and Tan, {Nadia Mei Lin} and Yuji Miyazaki and Kinouchi, {Shin Ichi} and Masato Koyama",

note = "Publisher Copyright: {\textcopyright} 1972-2012 IEEE.",

year = "2015",

month = jan,

day = "1",

doi = "10.1109/TIA.2014.2331426",

language = "English",

volume = "51",

pages = "420--428",

journal = "IEEE Transactions on Industry Applications",

issn = "0093-9994",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

AU - Akagi, Hirofumi

AU - Yamagishi, Tatsuya

AU - Tan, Nadia Mei Lin

AU - Miyazaki, Yuji

AU - Kinouchi, Shin Ichi

AU - Koyama, Masato

PY - 2015/1/1

Y1 - 2015/1/1

N2 - This paper describes the design, construction, and testing of a 750-V 100-kW 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiC-MOSFET/SBD dual modules. The maximum conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be as high as 98.7% at 42-kW operation. The overall power loss at the rated-power (100 kW) operation, excluding the gate-drive and control circuit losses, is divided into the conduction and switching losses produced by the SiC modules, the iron and copper losses due to magnetic devices, and the other unknown loss. The power-loss breakdown concludes that the sum of the conduction and switching losses is about 60% of the overall power loss and that the conduction loss is nearly equal to the switching loss at the 100-kW and 20-kHz operation.

AB - This paper describes the design, construction, and testing of a 750-V 100-kW 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiC-MOSFET/SBD dual modules. The maximum conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be as high as 98.7% at 42-kW operation. The overall power loss at the rated-power (100 kW) operation, excluding the gate-drive and control circuit losses, is divided into the conduction and switching losses produced by the SiC modules, the iron and copper losses due to magnetic devices, and the other unknown loss. The power-loss breakdown concludes that the sum of the conduction and switching losses is about 60% of the overall power loss and that the conduction loss is nearly equal to the switching loss at the 100-kW and 20-kHz operation.

KW - Bidirectional isolated dc-dc converters

KW - SiC-MOSFET

KW - conversion efficiency

KW - dual-active-bridge configuration

UR - http://www.scopus.com/inward/record.url?scp=84921516343&partnerID=8YFLogxK

U2 - 10.1109/TIA.2014.2331426

DO - 10.1109/TIA.2014.2331426

M3 - Article

AN - SCOPUS:84921516343

SN - 0093-9994

VL - 51

SP - 420

EP - 428

JO - IEEE Transactions on Industry Applications

JF - IEEE Transactions on Industry Applications

IS - 1

M1 - 6839038

ER -

Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this