Photo-dissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J. A. Larsson, M. Nolan, M. Murtagh, J. C. Greer, M. Barbe, F. Bailly, J. Chevallier, F. S. Silvestre, D. Loridant-Bernard, E. Constant, F. M. Constant

Research output: Journal PublicationArticlepeer-review

3 Citations (Scopus)


A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the SiGa-H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of CAs-H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds.

Original languageEnglish
Pages (from-to)234-239
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-4
Publication statusPublished - Jan 2002
Externally publishedYes


  • Gallium arsenide
  • Hydrogen passivation
  • Photo-dissociation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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