Modelling of Sb activation in ultra-shallow junction regions in bulk and strained Si

Yan Lai, Nicolas Cordero, James C. Greer

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review


The activation behaviour of dopants in ultra-shallow junctions on strained silicon is investigated from a simulation vantage point. Process models available in commercial simulation tools are typically developed for junctions formed with high implantation energies (< 50 keV) and for long anneal times. Hence the question arises as to whether these models and parameter sets can accurately predict the active profile for highly doped, ultra-shallow junctions formed thin strained silicon layers using short rapid thermal anneals (RTA, <10 seconds) at temperatures below 800 °C. By incorporating the results from experimental data, we develop modified models allowing for improved predictions of antimony activation within both bulk and strained silicon.

Original languageEnglish
Title of host publicationDoping Engineering for Front-End Processing
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781605110400
Publication statusPublished - 2008
Externally publishedYes
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: 25 Mar 200827 Mar 2008

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2008 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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