High-mobility flexible/transparent p-type copper iodide thin-film transistors and complementary inverters

Haijuan Wu, Lingyan Liang, Xiaolong Wang, Xixiu Shi, Hengbo Zhang, Yu Pei, Wanfa Li, Bo Sun, Cai Shen, Hongtao Cao

Research output: Journal PublicationArticlepeer-review

6 Citations (Scopus)

Abstract

High-performance transparent and low-process-temperature p-type devices are essential for portable and ‘invisible’ electronics. In this work, high-performance p-channel copper iodide (CuI) thin-film transistors (TFTs) with a bottom-gate structure are achieved via replacing traditional SiO2 dielectric with Chitosan (CS, a kind of solid polymer electrolytes), with the threshold voltage down to −0.35 V, field-effect mobility (μFE) up to 60 cm2V−1s−1 and on/off current ratio (Ion/Ioff) beyond 103. The CuI films spin-coated on CS-dielectrics in the air with high humidity have smoother surface morphology, tinier grains, higher packing density and hence a higher μFE, in sharp contrast with the SiO2 case. In addition, the CuI films on CS-dielectrics demonstrate a work function ∼ 0.1 eV lower than that on SiO2, which implies a smaller hole concentration and higher Ion/Ioff. And the low process temperature (
Original languageEnglish
Article number155795
JournalApplied Surface Science
Volume612
DOIs
Publication statusPublished - Mar 2023

Keywords

  • Metal (pseudo) halides
  • P-type semiconductors
  • Thin-film transistors
  • Kelvin probe force microscope
  • Complementary devices/circuits

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