Gate driver for the active thermal control of a DC/DC GaN-based converter

Pramod Kumar Prasobhu, Giampaolo Buticchi, Stephan Brueske, Marco Liserre

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

24 Citations (Scopus)

Abstract

Wide-Band-Gap power semiconductors based on SiC and GaN offer some significant advantages compared to Si-devices, in particular higher switching speed and higher operating temperature. These features offer potentially increased power density, which makes the temperature management critical especially for the PCB and components to which the GaN is connected. In this paper, an active gate driver with active thermal control is implemented and can be used to alter the losses of a DC/DC buck converter based on GaN transistors, with the aim of reducing the thermal cycling thus improving the converter's lifetime.

Original languageEnglish
Title of host publicationECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509007370
DOIs
Publication statusPublished - 2016
Externally publishedYes
Event2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016 - Milwaukee, United States
Duration: 18 Sep 201622 Sep 2016

Publication series

NameECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings

Conference

Conference2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016
Country/TerritoryUnited States
CityMilwaukee
Period18/09/1622/09/16

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Energy Engineering and Power Technology
  • Control and Optimization

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