Computational design of Si Si O2 interfaces: Stress and strain on the atomic scale

Keyphrases

• Atomic Scale 100%
• Chemical Bond 50%
• Chemical Constituents 50%
• Chemical Polarization 50%
• Chemical Stress 50%
• Computational Design 100%
• Computational Study 50%
• Density Functional Theory 100%
• Device Design 50%
• Electric Polarization 50%
• Electronic Devices 100%
• Electronic Materials 50%
• Electrostatic Interaction 50%
• Generalized Gradient Approximation 50%
• Interface Energy 50%
• Interface Strain 100%
• Interface Stress 100%
• Local Density Approximation 100%
• Long-range Electrostatics 50%
• Mechanical Components 50%
• Nanoscale Electronics 50%
• Numerical Atomic Orbitals 50%
• Oxide Interfaces 50%
• Oxygen Incorporation 50%
• Plane-wave Basis Set 50%
• Polarization Components 50%
• Silicon Lattice 50%
• Silicon Oxide 50%
• Silicon Suboxide 50%
• Silicon Surface 50%
• Silicon(110) 50%
• Strain Effect 50%
• Stress Effect 50%
• Stress Energy 100%
• Thermodynamic Stabilization 50%

Material Science

• Chemical Bonding 25%
• Density 100%
• Electronic Material 25%
• Electrostatic Interaction 25%
• Oxide Interface 25%
• Silicon 100%