A proposed confinement modulated gap nanowire transistor based on a metal (Tin)

Keyphrases

• Atomic Limit 50%
• Band Gap 50%
• Bandgap Engineering 50%
• Dopant Impurities 50%
• Energy Band Gap 50%
• Field-effect Transistors 50%
• Free Carriers 50%
• Material Engineering 50%
• Nanowire Transistor 100%
• Nanowires 100%
• Quantum Confinement 100%
• Quasi-one-dimensional Semiconductor 50%
• Semiconductor Nanostructures 50%
• Semiconductor Nanowires 50%
• Semiconductor-metal Transition 50%
• Semiconductors 50%
• Semimetal 100%
• Sub-5 Nm 50%
• Transistor 100%
• Wire Diameter 50%

Material Science

• Doping (Additives) 25%
• Field Effect Transistor 25%
• Materials Science 25%
• Nanocrystalline Material 25%
• Nanowire 100%
• Semimetals 75%
• Tin 100%
• Transistor 100%