Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes

Andrew Trentin; David Hind; Marco Degano; Christopher Tighe; Saul Lopez Arevalo; Li Yang; Mark Johnson; Pat Wheeler; Christopher Gerada; Anne Harris; Matthew Packwood

doi:10.1109/ECCE.2018.8557415

Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes

Andrew Trentin, David Hind, Marco Degano, Christopher Tighe, Saul Lopez Arevalo, Li Yang, Mark Johnson, Pat Wheeler, Christopher Gerada, Anne Harris, Matthew Packwood

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results.

Original language	English
Title of host publication	2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1829-1836
Number of pages	8
ISBN (Electronic)	9781479973118
DOIs	https://doi.org/10.1109/ECCE.2018.8557415
Publication status	Published - 3 Dec 2018
Event	10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018 - Portland, United States Duration: 23 Sept 2018 → 27 Sept 2018

Publication series

Name	2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018

Conference

Conference	10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018
Country/Territory	United States
City	Portland
Period	23/09/18 → 27/09/18

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Control and Optimization
Computer Networks and Communications
Hardware and Architecture
Information Systems and Management

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10.1109/ECCE.2018.8557415

Cite this

Trentin, A., Hind, D., Degano, M., Tighe, C., Arevalo, S. L., Yang, L., Johnson, M., Wheeler, P., Gerada, C., Harris, A., & Packwood, M. (2018). Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes. In 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018 (pp. 1829-1836). Article 8557415 (2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE.2018.8557415

Trentin, Andrew ; Hind, David ; Degano, Marco et al. / Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes. 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1829-1836 (2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018).

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title = "Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes",

abstract = "The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results.",

author = "Andrew Trentin and David Hind and Marco Degano and Christopher Tighe and Arevalo, {Saul Lopez} and Li Yang and Mark Johnson and Pat Wheeler and Christopher Gerada and Anne Harris and Matthew Packwood",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018 ; Conference date: 23-09-2018 Through 27-09-2018",

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doi = "10.1109/ECCE.2018.8557415",

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series = "2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018",

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Trentin, A, Hind, D, Degano, M, Tighe, C, Arevalo, SL, Yang, L, Johnson, M, Wheeler, P, Gerada, C, Harris, A & Packwood, M 2018, Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes. in 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018., 8557415, 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1829-1836, 10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018, Portland, United States, 23/09/18. https://doi.org/10.1109/ECCE.2018.8557415

Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes. / Trentin, Andrew; Hind, David; Degano, Marco et al.
2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1829-1836 8557415 (2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018).

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

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AU - Trentin, Andrew

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AU - Gerada, Christopher

AU - Harris, Anne

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N2 - The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results.

AB - The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results.

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Trentin A, Hind D, Degano M, Tighe C, Arevalo SL, Yang L et al. Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes. In 2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1829-1836. 8557415. (2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018). doi: 10.1109/ECCE.2018.8557415

Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes

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