Single point diamond turning of single crystal silicon carbide: Molecular dynamic simulation study

Saurav Goel, Xichun Luo, R. L. Reuben, W. B. Rashid, Jining Sun

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

14 Citations (Scopus)

Abstract

Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal β-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). β-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp3-sp2 order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.

Original languageEnglish
Title of host publicationPrecision Machining VI
PublisherTrans Tech Publications Ltd
Pages150-155
Number of pages6
ISBN (Print)9783037852972
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event6th International Congress of Precision Machining, ICPM2011 - Liverpool, Merseyside, United Kingdom
Duration: 13 Sept 201115 Sept 2011

Publication series

NameKey Engineering Materials
Volume496
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Conference

Conference6th International Congress of Precision Machining, ICPM2011
Country/TerritoryUnited Kingdom
CityLiverpool, Merseyside
Period13/09/1115/09/11

Keywords

  • MD simulations
  • Single point diamond turning
  • β-silicon carbide (cubic)

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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