Simplified Route for Deposition of Binary and Ternary Bismuth Sulphide Thin Films for Solar Cell Applications

Tanzeela Fazal; Bushra Ismail; Mazloom Shah; Shahid Iqbal; Eslam B. Elkaeed; Nasser S. Awwad; Hala A. Ibrahium

doi:10.3390/su14084603

Simplified Route for Deposition of Binary and Ternary Bismuth Sulphide Thin Films for Solar Cell Applications

Tanzeela Fazal, Bushra Ismail, Mazloom Shah, Shahid Iqbal, Eslam B. Elkaeed, Nasser S. Awwad, Hala A. Ibrahium

Research output: Journal Publication › Article › peer-review

4 Citations (Scopus)

Abstract

For photovoltaic applications, undoped and Ni²⁺ doped Bi₂ S₃ thin films were chemically deposited onto glass substrates at room temperature. Elemental diffraction analysis confirmed the successful Ni²⁺ incorporation in the range of 1.0 to 2.0 at. %, while X-ray Diffraction analysis revealed that orthorhombic crystal lattice of Bi₂ S₃ was conserved while transferring from binary to ternary phase. Scanning electron microscopy images reported homogeneous and crack-free morphology of the obtained films. Optoelectronic analysis revealed that the bandgap value was shifted from 1.7 to 1.1 eV. Ni²⁺ incorporation also improved the carrier concentration, leading to higher electrical conductivity. Resultant optoelectronic behavior of ternary Bi_2−x Ni_x S₃ thin films suggests that doping is proved to be an effectual tool to optimize the photovoltaic response of Bi₂ S₃ for solar cell applications.

Original language	English
Article number	4603
Journal	Sustainability (Switzerland)
Volume	14
Issue number	8
DOIs	https://doi.org/10.3390/su14084603
Publication status	Published - 1 Apr 2022
Externally published	Yes

Keywords

chemical bath deposition
optoelectronic properties
photovoltaic behaviour
semiconductors

ASJC Scopus subject areas

Computer Science (miscellaneous)
Geography, Planning and Development
Renewable Energy, Sustainability and the Environment
Environmental Science (miscellaneous)
Energy Engineering and Power Technology
Hardware and Architecture
Computer Networks and Communications
Management, Monitoring, Policy and Law

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.3390/su14084603

Cite this

@article{9e557da3c2be44faa7e51f11fa6f7643,

title = "Simplified Route for Deposition of Binary and Ternary Bismuth Sulphide Thin Films for Solar Cell Applications",

abstract = "For photovoltaic applications, undoped and Ni2+ doped Bi2 S3 thin films were chemically deposited onto glass substrates at room temperature. Elemental diffraction analysis confirmed the successful Ni2+ incorporation in the range of 1.0 to 2.0 at. %, while X-ray Diffraction analysis revealed that orthorhombic crystal lattice of Bi2 S3 was conserved while transferring from binary to ternary phase. Scanning electron microscopy images reported homogeneous and crack-free morphology of the obtained films. Optoelectronic analysis revealed that the bandgap value was shifted from 1.7 to 1.1 eV. Ni2+ incorporation also improved the carrier concentration, leading to higher electrical conductivity. Resultant optoelectronic behavior of ternary Bi2−x Nix S3 thin films suggests that doping is proved to be an effectual tool to optimize the photovoltaic response of Bi2 S3 for solar cell applications.",

keywords = "chemical bath deposition, optoelectronic properties, photovoltaic behaviour, semiconductors",

author = "Tanzeela Fazal and Bushra Ismail and Mazloom Shah and Shahid Iqbal and Elkaeed, {Eslam B.} and Awwad, {Nasser S.} and Ibrahium, {Hala A.}",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = apr,

day = "1",

doi = "10.3390/su14084603",

language = "English",

volume = "14",

journal = "Sustainability (Switzerland)",

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TY - JOUR

T1 - Simplified Route for Deposition of Binary and Ternary Bismuth Sulphide Thin Films for Solar Cell Applications

AU - Fazal, Tanzeela

AU - Ismail, Bushra

AU - Shah, Mazloom

AU - Iqbal, Shahid

AU - Elkaeed, Eslam B.

AU - Awwad, Nasser S.

AU - Ibrahium, Hala A.

PY - 2022/4/1

Y1 - 2022/4/1

N2 - For photovoltaic applications, undoped and Ni2+ doped Bi2 S3 thin films were chemically deposited onto glass substrates at room temperature. Elemental diffraction analysis confirmed the successful Ni2+ incorporation in the range of 1.0 to 2.0 at. %, while X-ray Diffraction analysis revealed that orthorhombic crystal lattice of Bi2 S3 was conserved while transferring from binary to ternary phase. Scanning electron microscopy images reported homogeneous and crack-free morphology of the obtained films. Optoelectronic analysis revealed that the bandgap value was shifted from 1.7 to 1.1 eV. Ni2+ incorporation also improved the carrier concentration, leading to higher electrical conductivity. Resultant optoelectronic behavior of ternary Bi2−x Nix S3 thin films suggests that doping is proved to be an effectual tool to optimize the photovoltaic response of Bi2 S3 for solar cell applications.

AB - For photovoltaic applications, undoped and Ni2+ doped Bi2 S3 thin films were chemically deposited onto glass substrates at room temperature. Elemental diffraction analysis confirmed the successful Ni2+ incorporation in the range of 1.0 to 2.0 at. %, while X-ray Diffraction analysis revealed that orthorhombic crystal lattice of Bi2 S3 was conserved while transferring from binary to ternary phase. Scanning electron microscopy images reported homogeneous and crack-free morphology of the obtained films. Optoelectronic analysis revealed that the bandgap value was shifted from 1.7 to 1.1 eV. Ni2+ incorporation also improved the carrier concentration, leading to higher electrical conductivity. Resultant optoelectronic behavior of ternary Bi2−x Nix S3 thin films suggests that doping is proved to be an effectual tool to optimize the photovoltaic response of Bi2 S3 for solar cell applications.

KW - chemical bath deposition

KW - optoelectronic properties

KW - photovoltaic behaviour

KW - semiconductors

UR - http://www.scopus.com/inward/record.url?scp=85128772512&partnerID=8YFLogxK

U2 - 10.3390/su14084603

DO - 10.3390/su14084603

M3 - Article

AN - SCOPUS:85128772512

SN - 2071-1050

VL - 14

JO - Sustainability (Switzerland)

JF - Sustainability (Switzerland)

IS - 8

M1 - 4603

ER -

Simplified Route for Deposition of Binary and Ternary Bismuth Sulphide Thin Films for Solar Cell Applications

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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