TY - GEN
T1 - Performance analysis of UniTL-H6 inverter with SiC MOSFETs
AU - Barater, Davide
AU - Buticchi, Giampaolo
AU - Concari, Carlo
AU - Franceschini, Giovanni
AU - Gurpinar, Emre
AU - De, Dipankar
AU - Castellazzi, Alberto
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014
Y1 - 2014
N2 - A transformerless single-phase PV inverter has been tested with latest generation 650V/ 20A SiC MOSFETs from ROHM. Test results show that the inverter can be operated with high efficiency at high switching frequencies due to high switching and conduction performance of the devices. Results also show that reduction in output filter size, reduced harmonic distortion and increase in power density are enabled by SiC MOSFETs for PV inverters without compromising on the efficiency of the system.
AB - A transformerless single-phase PV inverter has been tested with latest generation 650V/ 20A SiC MOSFETs from ROHM. Test results show that the inverter can be operated with high efficiency at high switching frequencies due to high switching and conduction performance of the devices. Results also show that reduction in output filter size, reduced harmonic distortion and increase in power density are enabled by SiC MOSFETs for PV inverters without compromising on the efficiency of the system.
KW - Renewable energy
KW - SiC MOSFET
KW - Single phase inverters
KW - Transformerless PV inverter
UR - http://www.scopus.com/inward/record.url?scp=84906667120&partnerID=8YFLogxK
U2 - 10.1109/IPEC.2014.6869619
DO - 10.1109/IPEC.2014.6869619
M3 - Conference contribution
AN - SCOPUS:84906667120
SN - 9781479927050
T3 - 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
SP - 433
EP - 439
BT - 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
PB - IEEE Computer Society
T2 - 7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
Y2 - 18 May 2014 through 21 May 2014
ER -
