TY - GEN
T1 - Optimization on the design of an ultra-high-power multisection tunable laser gain epilayers
AU - Zhang, Yaping
AU - Benson, Trevor M.
AU - Christopoulos, Christos
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007
Y1 - 2007
N2 - Great efforts and vast investments have been put into the research and development of widely tunable lasers in the last 25 years. Tunable lasers have become critical components in the implementation of next generation telecommunication networks and systems, to provide dynamic wavelength provision for channel restoration, reconfiguration and protection. Some stringent requirements have been imposed on tunable lasers by telecommunication applications. Consequently, ultra-high optical output power (≥100 mW), wide tunability (tuning range ∼ 40nm), narrow linewidth (< 2MHz), and side-mode suppression ratio (SMSR > 40dB) have become the main objectives for the development of the future telecommunication tunable lasers. Facet output power is the fundamental decisive factor among these targets. Original design ideas and novel approaches to the design of ultra-high power InGaAsP/InP based multisection widely-tunable laser gain section have been reported by the authors previously, mainly including: firstly, a bulk balance layer structure is placed above the InP buffer layer and below the MQWs stack, which enables a large reduction of free-carrier absorption loss by greatly shifting the optical field distribution to the intrinsic and n-doped sides. Secondly, an InP spacer layer is placed below the ridge and above the multiple quantum wells (MQWs) stack, so as to introduce extra freedom in the control of widening the single mode ridge width. This paper will focus on the optimization on the implementation of the above design ideas and approaches, regarding single mode ridge width, optical confinement in the MQWs, optical overlap with thep-doped epilayers, output power, threshold current, and slope efficiency.
AB - Great efforts and vast investments have been put into the research and development of widely tunable lasers in the last 25 years. Tunable lasers have become critical components in the implementation of next generation telecommunication networks and systems, to provide dynamic wavelength provision for channel restoration, reconfiguration and protection. Some stringent requirements have been imposed on tunable lasers by telecommunication applications. Consequently, ultra-high optical output power (≥100 mW), wide tunability (tuning range ∼ 40nm), narrow linewidth (< 2MHz), and side-mode suppression ratio (SMSR > 40dB) have become the main objectives for the development of the future telecommunication tunable lasers. Facet output power is the fundamental decisive factor among these targets. Original design ideas and novel approaches to the design of ultra-high power InGaAsP/InP based multisection widely-tunable laser gain section have been reported by the authors previously, mainly including: firstly, a bulk balance layer structure is placed above the InP buffer layer and below the MQWs stack, which enables a large reduction of free-carrier absorption loss by greatly shifting the optical field distribution to the intrinsic and n-doped sides. Secondly, an InP spacer layer is placed below the ridge and above the multiple quantum wells (MQWs) stack, so as to introduce extra freedom in the control of widening the single mode ridge width. This paper will focus on the optimization on the implementation of the above design ideas and approaches, regarding single mode ridge width, optical confinement in the MQWs, optical overlap with thep-doped epilayers, output power, threshold current, and slope efficiency.
KW - Free-carrier absorption loss
KW - Multi section tunable laser
KW - Slope efficiency
KW - Threshold current
KW - Ultra high power epitaxial design
UR - http://www.scopus.com/inward/record.url?scp=34248549421&partnerID=8YFLogxK
U2 - 10.1117/12.698106
DO - 10.1117/12.698106
M3 - Conference contribution
AN - SCOPUS:34248549421
SN - 081946581X
SN - 9780819465818
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Physics and Simulation of Optoelectronic Devices XV
T2 - Physics and Simulation of Optoelectronic Devices XV
Y2 - 22 January 2007 through 25 January 2007
ER -