Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate

Jie’an Jiang; Houqiang Xu; Moheb Sheikhi; Liang Li; Zhenhai Yang; Jason Hoo; Shiping Guo; Yuheng Zeng; Wei Guo; Jichun Ye

doi:10.1364/OE.27.016195

Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate

Jie’an Jiang, Houqiang Xu, Moheb Sheikhi, Liang Li, Zhenhai Yang, Jason Hoo, Shiping Guo, Yuheng Zeng, Wei Guo, Jichun Ye

Department of Electrical and Electronic Engineering

Research output: Journal Publication › Article › peer-review

10 Citations (Scopus)

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Abstract

The optical properties of hexagonal GaN microdisk arrays grown on sapphire substrates by selective area growth (SAG) technique were investigated both experimentally and theoretically. Whispering-gallery-mode (WGM) lasing is observed from various directions of the GaN pyramids collected at room temperature, with the dominant lasing mode being Transverse-Electric (TE) polarized. A relaxation of compressive strain in the lateral overgrown region of the GaN microdisk is illustrated by photoluminescence (PL) mapping and Raman spectroscopy. A strong correlation between the crystalline quality and lasing behavior of the GaN microdisks was also demonstrated.

Original language	English
Pages (from-to)	16195-16205
Journal	Optics Express
Volume	27
Issue number	11
DOIs	https://doi.org/10.1364/OE.27.016195
Publication status	Published - 27 May 2019

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title = "Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate",

abstract = "The optical properties of hexagonal GaN microdisk arrays grown on sapphire substrates by selective area growth (SAG) technique were investigated both experimentally and theoretically. Whispering-gallery-mode (WGM) lasing is observed from various directions of the GaN pyramids collected at room temperature, with the dominant lasing mode being Transverse-Electric (TE) polarized. A relaxation of compressive strain in the lateral overgrown region of the GaN microdisk is illustrated by photoluminescence (PL) mapping and Raman spectroscopy. A strong correlation between the crystalline quality and lasing behavior of the GaN microdisks was also demonstrated.",

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doi = "10.1364/OE.27.016195",

language = "English",

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TY - JOUR

T1 - Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate

AU - Jiang, Jie’an

AU - Xu, Houqiang

AU - Sheikhi, Moheb

AU - Li, Liang

AU - Yang, Zhenhai

AU - Hoo, Jason

AU - Guo, Shiping

AU - Zeng, Yuheng

AU - Guo, Wei

AU - Ye, Jichun

N1 - Note: © 2019 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.

PY - 2019/5/27

Y1 - 2019/5/27

N2 - The optical properties of hexagonal GaN microdisk arrays grown on sapphire substrates by selective area growth (SAG) technique were investigated both experimentally and theoretically. Whispering-gallery-mode (WGM) lasing is observed from various directions of the GaN pyramids collected at room temperature, with the dominant lasing mode being Transverse-Electric (TE) polarized. A relaxation of compressive strain in the lateral overgrown region of the GaN microdisk is illustrated by photoluminescence (PL) mapping and Raman spectroscopy. A strong correlation between the crystalline quality and lasing behavior of the GaN microdisks was also demonstrated.

AB - The optical properties of hexagonal GaN microdisk arrays grown on sapphire substrates by selective area growth (SAG) technique were investigated both experimentally and theoretically. Whispering-gallery-mode (WGM) lasing is observed from various directions of the GaN pyramids collected at room temperature, with the dominant lasing mode being Transverse-Electric (TE) polarized. A relaxation of compressive strain in the lateral overgrown region of the GaN microdisk is illustrated by photoluminescence (PL) mapping and Raman spectroscopy. A strong correlation between the crystalline quality and lasing behavior of the GaN microdisks was also demonstrated.

U2 - 10.1364/OE.27.016195

DO - 10.1364/OE.27.016195

M3 - Article

SN - 1094-4087

VL - 27

SP - 16195

EP - 16205

JO - Optics Express

JF - Optics Express

IS - 11

ER -

Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate

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