Abstract
Molecular dynamics (MD) simulation was carried out to acquire an in-depth understanding of the flow behaviour of single crystal silicon during nanometric cutting on three principal crystallographic planes and at different cutting temperatures. The key findings were that (i) the substrate material underneath the cutting tool was observed for the first time to experience a rotational flow akin to fluids at all the tested temperatures up to 1200 K. (ii) The degree of flow in terms of vorticity was found higher on the (1 1 1) crystal plane signifying better machinability on this orientation in accord with the current pool of knowledge (iii) an increase in the machining temperature reduces the spring-back effect and thereby the elastic recovery and (iv) the cutting orientation and the cutting temperature showed significant dependence on the location of the stagnation region in the cutting zone of the substrate.
Original language | English |
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Article number | 015002 |
Journal | Modelling and Simulation in Materials Science and Engineering |
Volume | 24 |
Issue number | 1 |
DOIs | |
Publication status | Published - 16 Nov 2015 |
Externally published | Yes |
Keywords
- material flow
- molecular dynamics
- nanometric cutting
- single crystal silicon
- stagnation region
ASJC Scopus subject areas
- Modelling and Simulation
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Computer Science Applications