Abstract
The work reports a well controlled synthesis of un-doped and Fe2+ and Ni2+ doped ZnS quantum dots (QDs) based highly luminescent of pure cubic zinc blende structure. The samples were characterized for structural, morphological, optical and electrical parameters and great care has been made in correlating all these properties. The optimum concentrations of Zn1−xFexS and Zn1−xNixS dopants were found to be x = 0.2 for superior optical and electrical properties. Incorporation of Fe2+ or Ni2+ into ZnS lattice have generated acceptor level as an isolated state just above the valence band of ZnS, and hence electron requiring less excitation energy for transferring from the acceptor level to the conduction band. Moreover, it was found that the PL emission intensity of Fe2+ doped ZnS QDs is higher than that of Ni2+ doped. The results indicated that the active luminescent centers created by dopants and localized surface plasmon resonance energy transfer of ZnS QDs significantly increased with Fe2+ ions into the ZnS lattice. Over all in light of the results obtained during the study, the doped samples can have potential for function in vast variety of applications.
Original language | English |
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Pages (from-to) | 4449-4457 |
Number of pages | 9 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 28 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1 Mar 2017 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering