Engineering the optical properties of nickel sulphide thin films by zinc integration for photovoltaic applications

Junaid Younus; Warda Shahzad; Bushra Ismail; Tanzeela Fazal; Mazloom Shah; Shahid Iqbal; Ahmed Hussain Jawhari; Nasser S. Awwad; Hala A. Ibrahium

doi:10.1039/d3ra04011a

Engineering the optical properties of nickel sulphide thin films by zinc integration for photovoltaic applications

Junaid Younus, Warda Shahzad, Bushra Ismail, Tanzeela Fazal, Mazloom Shah, Shahid Iqbal, Ahmed Hussain Jawhari, Nasser S. Awwad, Hala A. Ibrahium

Research output: Journal Publication › Article › peer-review

1 Citation (Scopus)

Abstract

Thin films of binary nickel sulphide (NiS) and zinc-doped ternary nickel sulphides (Ni_1−xZn_xS, where x = 0-1) were effectively produced by the chemical bath deposition method, and their potential use in photovoltaics were investigated. Dopant inclusion did not change the crystal structure of NiS, according to the structural analysis of the synthesized samples. They are appropriate for solar cell applications since the morphological study verified the crack-free deposition. Optical research revealed that the deposited thin films had refractive index (n) ranges between 1.25 and 3.0, extinction coefficient (k) ranges between 0.01 and 0.13, and bandgap values between 2.25 and 2.54 eV. Overall findings indicated that doping is a useful method for modifying the composition, and therefore, the structural and morphological characteristics of NiS thin films, to enhance their optoelectronic behavior.

Original language	English
Pages (from-to)	27415-27422
Number of pages	8
Journal	RSC Advances
Volume	13
Issue number	39
DOIs	https://doi.org/10.1039/d3ra04011a
Publication status	Published - 13 Sept 2023
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1039/d3ra04011a

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title = "Engineering the optical properties of nickel sulphide thin films by zinc integration for photovoltaic applications",

abstract = "Thin films of binary nickel sulphide (NiS) and zinc-doped ternary nickel sulphides (Ni1−xZnxS, where x = 0-1) were effectively produced by the chemical bath deposition method, and their potential use in photovoltaics were investigated. Dopant inclusion did not change the crystal structure of NiS, according to the structural analysis of the synthesized samples. They are appropriate for solar cell applications since the morphological study verified the crack-free deposition. Optical research revealed that the deposited thin films had refractive index (n) ranges between 1.25 and 3.0, extinction coefficient (k) ranges between 0.01 and 0.13, and bandgap values between 2.25 and 2.54 eV. Overall findings indicated that doping is a useful method for modifying the composition, and therefore, the structural and morphological characteristics of NiS thin films, to enhance their optoelectronic behavior.",

author = "Junaid Younus and Warda Shahzad and Bushra Ismail and Tanzeela Fazal and Mazloom Shah and Shahid Iqbal and Jawhari, {Ahmed Hussain} and Awwad, {Nasser S.} and Ibrahium, {Hala A.}",

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doi = "10.1039/d3ra04011a",

language = "English",

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T1 - Engineering the optical properties of nickel sulphide thin films by zinc integration for photovoltaic applications

AU - Younus, Junaid

AU - Shahzad, Warda

AU - Ismail, Bushra

AU - Fazal, Tanzeela

AU - Shah, Mazloom

AU - Iqbal, Shahid

AU - Jawhari, Ahmed Hussain

AU - Awwad, Nasser S.

AU - Ibrahium, Hala A.

PY - 2023/9/13

Y1 - 2023/9/13

N2 - Thin films of binary nickel sulphide (NiS) and zinc-doped ternary nickel sulphides (Ni1−xZnxS, where x = 0-1) were effectively produced by the chemical bath deposition method, and their potential use in photovoltaics were investigated. Dopant inclusion did not change the crystal structure of NiS, according to the structural analysis of the synthesized samples. They are appropriate for solar cell applications since the morphological study verified the crack-free deposition. Optical research revealed that the deposited thin films had refractive index (n) ranges between 1.25 and 3.0, extinction coefficient (k) ranges between 0.01 and 0.13, and bandgap values between 2.25 and 2.54 eV. Overall findings indicated that doping is a useful method for modifying the composition, and therefore, the structural and morphological characteristics of NiS thin films, to enhance their optoelectronic behavior.

AB - Thin films of binary nickel sulphide (NiS) and zinc-doped ternary nickel sulphides (Ni1−xZnxS, where x = 0-1) were effectively produced by the chemical bath deposition method, and their potential use in photovoltaics were investigated. Dopant inclusion did not change the crystal structure of NiS, according to the structural analysis of the synthesized samples. They are appropriate for solar cell applications since the morphological study verified the crack-free deposition. Optical research revealed that the deposited thin films had refractive index (n) ranges between 1.25 and 3.0, extinction coefficient (k) ranges between 0.01 and 0.13, and bandgap values between 2.25 and 2.54 eV. Overall findings indicated that doping is a useful method for modifying the composition, and therefore, the structural and morphological characteristics of NiS thin films, to enhance their optoelectronic behavior.

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DO - 10.1039/d3ra04011a

M3 - Article

AN - SCOPUS:85172335373

SN - 2046-2069

VL - 13

SP - 27415

EP - 27422

JO - RSC Advances

JF - RSC Advances

IS - 39

ER -

Engineering the optical properties of nickel sulphide thin films by zinc integration for photovoltaic applications

Abstract

ASJC Scopus subject areas

UN SDGs

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