@inproceedings{3ef5d706e5534c5d8f66febec1f29f79,
title = "Effect of Metal Coupling on Schottky Barrier Height Extraction",
abstract = "This paper investigates the impact of metal contact coupling strength and Fermi energy on temperature-dependent currents and the extraction of Schottky barrier height. As the scaling of contact length becomes increasingly important, understanding the role of metal coupling in establishing good contacts with low-dimensional materials is crucial. A coupled mode-space NEGF approach with Schottky contacts that accounts for the coupling strength between metal and carbon atoms is utilized to simulate the temperature-dependent currents in CNT devices. For weakly coupled contacts, the effective Schottky barrier height at the on-state is comparable to the flat band value, while for strongly coupled contacts, it can be reduced to the point of becoming negative, implying distinct degrees of dominance between thermal-assisted and direct tunneling. These findings may guide experimental measurements and inform strategies to achieve high-quality contacts with low-dimensional materials for scaled devices.",
keywords = "Contact resistance, Low dimensional material, metal coupling, NEGF, Schottky barrier extraction",
author = "Su, {Sheng Kai} and Edward Chen and Alfonso Sanchez-Soares and Thomas Kelly and Giorgos Fagas and Greer, {James C.} and Gregory Pitner and Wong, {H. S.Philip} and Radu, {Iuliana P.}",
note = "Publisher Copyright: {\textcopyright} 2023 The Japan Society of Applied Physics.; 2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023 ; Conference date: 27-09-2023 Through 29-09-2023",
year = "2023",
doi = "10.23919/SISPAD57422.2023.10319637",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "109--112",
booktitle = "2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023",
address = "United States",
}