Effect of Metal Coupling on Schottky Barrier Height Extraction

Sheng Kai Su, Edward Chen, Alfonso Sanchez-Soares, Thomas Kelly, Giorgos Fagas, James C. Greer, Gregory Pitner, H. S.Philip Wong, Iuliana P. Radu

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

Abstract

This paper investigates the impact of metal contact coupling strength and Fermi energy on temperature-dependent currents and the extraction of Schottky barrier height. As the scaling of contact length becomes increasingly important, understanding the role of metal coupling in establishing good contacts with low-dimensional materials is crucial. A coupled mode-space NEGF approach with Schottky contacts that accounts for the coupling strength between metal and carbon atoms is utilized to simulate the temperature-dependent currents in CNT devices. For weakly coupled contacts, the effective Schottky barrier height at the on-state is comparable to the flat band value, while for strongly coupled contacts, it can be reduced to the point of becoming negative, implying distinct degrees of dominance between thermal-assisted and direct tunneling. These findings may guide experimental measurements and inform strategies to achieve high-quality contacts with low-dimensional materials for scaled devices.

Original languageEnglish
Title of host publication2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages109-112
Number of pages4
ISBN (Electronic)9784863488038
DOIs
Publication statusPublished - 2023
Event2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023 - Kobe, Japan
Duration: 27 Sept 202329 Sept 2023

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023
Country/TerritoryJapan
CityKobe
Period27/09/2329/09/23

Keywords

  • Contact resistance
  • Low dimensional material
  • metal coupling
  • NEGF
  • Schottky barrier extraction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

Fingerprint

Dive into the research topics of 'Effect of Metal Coupling on Schottky Barrier Height Extraction'. Together they form a unique fingerprint.

Cite this