TY - JOUR
T1 - Deposition of bismuth sulfide and aluminum doped bismuth sulfide thin films for photovoltaic applications
AU - Fazal, Tanzeela
AU - Iqbal, Shahid
AU - Shah, Mazloom
AU - Bahadur, Ali
AU - Ismail, Bushra
AU - Abd-Rabboh, Hisham S.M.
AU - Hameed, Rabia
AU - Mahmood, Qaiser
AU - Ibrar, Aliya
AU - Nasar, Muhammad Sufyan
AU - Ehsan, Yasir
AU - Shah Saqib, Ahmad Nauman
AU - Adnan,
AU - Qayyum, Muhammad Abdul
N1 - Publisher Copyright:
© 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2022/1
Y1 - 2022/1
N2 - Binary bismuth sulfide (Bi2S3) and ternary aluminum-doped bismuth sulfide (Al@Bi2S3) thin films were prepared by the chemical bath deposition method for photovoltaic applications. The newly designed materials synthesized at room temperature were thoroughly analyzed by several characterization techniques i.e., X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, optical absorption, thickness measurement, and Hall effect techniques. Correlation between structural, morphological, optical, electrical, and transport properties was evaluated. The parent material i.e., Bi2S3 is reported to have an orthorhombic phase, while doped derivatives revealed the amorphous phase. Optical band gaps in the range of 1.6–1.3 eV and absorption coefficients were found in the range of 104 to 106 cm−1. The thickness of the films changed with the change in the composition of the solution matrix and the films were well adhered, compact, and crack free. Hall measurements show that the dominant carriers in all studied compounds were electrons and that the carrier density for ternary films is almost two orders of magnitude greater than binary Bi2S3. The disorderliness in these newly designed materials is traced through the estimation of the change in the Urbach energy.
AB - Binary bismuth sulfide (Bi2S3) and ternary aluminum-doped bismuth sulfide (Al@Bi2S3) thin films were prepared by the chemical bath deposition method for photovoltaic applications. The newly designed materials synthesized at room temperature were thoroughly analyzed by several characterization techniques i.e., X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, optical absorption, thickness measurement, and Hall effect techniques. Correlation between structural, morphological, optical, electrical, and transport properties was evaluated. The parent material i.e., Bi2S3 is reported to have an orthorhombic phase, while doped derivatives revealed the amorphous phase. Optical band gaps in the range of 1.6–1.3 eV and absorption coefficients were found in the range of 104 to 106 cm−1. The thickness of the films changed with the change in the composition of the solution matrix and the films were well adhered, compact, and crack free. Hall measurements show that the dominant carriers in all studied compounds were electrons and that the carrier density for ternary films is almost two orders of magnitude greater than binary Bi2S3. The disorderliness in these newly designed materials is traced through the estimation of the change in the Urbach energy.
UR - http://www.scopus.com/inward/record.url?scp=85116845885&partnerID=8YFLogxK
U2 - 10.1007/s10854-021-07154-0
DO - 10.1007/s10854-021-07154-0
M3 - Article
AN - SCOPUS:85116845885
SN - 0957-4522
VL - 33
SP - 42
EP - 53
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 1
ER -
