A well-defined S-g-C₃N₄/Cu-NiS heterojunction interface towards enhanced spatial charge separation with excellent photocatalytic ability: Synergetic effect, kinetics, antibacterial activity, and mechanism insights

A well-defined heterojunction among two dissimilar semiconductors exhibited enhanced photocatalytic performance owing to its capability for boosting the photoinduced electron/hole pair transportation. Therefore, designing and developing such heterojunctions using diverse semiconductor-based materials to enhance the photocatalytic ability employing various approaches have gained research attention. For this objective, g-C3N4 is considered as a potential photocatalytic material for organic dye degradation; however, the rapid recombination rate of photoinduced charge carriers restricts the widespread applications of g-C3N4. Henceforth, in the current study, we constructed a heterojunction of S-g-C3N4/Cu-NiS (SCN/CNS) two-dimensional/one-dimensional (2D/1D) binary nanocomposites (NCs) by a self-assembly approach. XRD results confirm the construction of 22% SCN/7CNS binary NCs. TEM analysis demonstrates that binary NCs comprise Cu-NiS nanorods (NRs) integrated with nanosheets (NSs) such as the morphology of SCN. The observed bandgap value of SCN is 2.69 eV; nevertheless, the SCN/CNS binary NCs shift the bandgap to 2.63 eV. Photoluminescence spectral analysis displays that the electron-hole pair recombination rate in the SCN/CNS binary NCs is excellently reduced owing to the construction of the well-defined heterojunction. The photoelectrochemical observations illustrate that SCN/CNS binary NCs improve the photocurrent to ∼0.66 mA and efficiently suppress the electron-hole pairs when compared with that of undoped NiS, CNS and SCN. Therefore, the 22% SCN/7CNS binary NCs efficiently improved methylene blue (MB) degradation to 99% for 32 min under visible light irradiation.