Abstract
The influence of polymorphism on nanometric machinability of single crystal silicon carbide (SiC) has been investigated through molecular dynamics (MD) simulation. The simulation results are compared with silicon as a reference material. Cutting hardness was adopted as a quantifier of the machinability of the polytypes of single crystal SiC. 3C-SiC offered highest cutting resistance (∼2.9 times that of silicon) followed by the 4H-SiC (∼2.8 times that of silicon) whereas 6H-SiC (∼2.1 times that of silicon) showed the least. Despite its high cutting resistance, 4H-SiC showed the minimum sub-surface crystal lattice deformed layer depth, in contrast to 6H-SiC. Further analysis of temperatures in the cutting zone and the percentage tool wear indicated that single point diamond turning (SPDT) of single crystal SiC could be limited to either 6H-SiC or 4H-SiC depending upon quality and cost considerations as these were found to be more responsive and amenable to SPDT compared to single crystal 3C-SiC.
| Original language | English |
|---|---|
| Pages (from-to) | 3423-3434 |
| Number of pages | 12 |
| Journal | Journal of the European Ceramic Society |
| Volume | 32 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Sept 2012 |
| Externally published | Yes |
Keywords
- Ductile regime machining
- Nanometric cutting
- SiC
- Silicon
- Tool wear
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry