Top-gated carbon nanotube FETs from quantum simulations: Comparison with experiments

A. Sanchez-Soares, T. Kelly, G. Fagas, J. C. Greer, E. Chen

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

Abstract

We present quantum simulations of carbon nanotube field-effect transistors (CNT-FETs) based on top-gated architectures and compare to electrical characterization on devices with 15 nm channel lengths. A non-equilibrium Green's function (NEGF) quantum transport method coupled with a k→ ·p→ description of the electronic structure is demonstrated to achieve excellent agreement with the reported experimental data. Factors influencing the electrostatic control of the channel are investigated and reveal that detailed modeling of the electrostatics and the electronic band structure of the CNT is required to achieve quantitative agreement with experiment.

Original languageEnglish
Title of host publicationVLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665419345
DOIs
Publication statusPublished - 19 Apr 2021
Event2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan, Province of China
Duration: 19 Apr 202122 Apr 2021

Publication series

NameVLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
Country/TerritoryTaiwan, Province of China
CityHsinchu
Period19/04/2122/04/21

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Control and Optimization

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