Tin nanowire field effect transistor

Lida Ansari, Giorgos Fagas, James C. Greer

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

Semimetal tin nanowires of sufficiently small diameters become semiconductors. Bandgap engineering based on this effect allows for the design of a confinement modulated gap field-effect transistor in which the need for doping in the source, channel or drain is eliminated. Functionality of a dopant-free, single-material field effect transistor is demonstrated through ab initio simulations. Drain-source current-voltage characteristic of the confinement modulated gap transistor shows that the subthreshold slope and the on/off ratio are 73 mV/dec and up to 104 at VDD=400 mV, respectively.

Original languageEnglish
Title of host publication2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Pages294-297
Number of pages4
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France
Duration: 17 Sep 201221 Sep 2012

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference42nd European Solid-State Device Research Conference, ESSDERC 2012
Country/TerritoryFrance
CityBordeaux
Period17/09/1221/09/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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