Supercritical chemical fluid deposition of high quality compound semiconductors

Mohammad Afzaal, Gabriele Aksomaityte, Paul O'Brien, Fei Cheng, Michael W. George, Andrew L. Hector, Steven M. Howdle, Jason R. Hyde, William Levason, Mohamed A. Malik, Kanad Mallik, Chinh Q. Nguyen, Gillian Reid, Pier Sazio, David C. Smith, Michael Webster, James W. Wilson, Jixin Yang, Wenjian Zhang

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

Abstract

The main advantage of deposition from supercritical fluids over conventional CVD is the ability to fill high aspect ratio templates. Deposition of metals, indirect semiconductors and insulators into templates with dimensions down to 3 nm has been demonstrated by others, with no apparent pore blocking. In this paper we present a demonstration that it is also possible to deposit high quality, luminescent compound semiconductor films from supercritical CO2or CO2/hexane mixtures. Depositions of CdS and III-V materials such as InP have been achieved through careful optimisation of precursor chemistry, reactor geometry and deposition conditions, supported by detailed measurements of the semiconductor film properties.

Original languageEnglish
Title of host publicationECS Transactions - EuroCVD 17/CVD 17
Pages1193-1197
Number of pages5
Edition8 PART 2
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: 4 Oct 20099 Oct 2009

Publication series

NameECS Transactions
Number8 PART 2
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society
Country/TerritoryAustria
CityVienna
Period4/10/099/10/09

ASJC Scopus subject areas

  • Engineering (all)

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