Supercritical chemical fluid deposition of high quality compound semiconductors

Mohammad Afzaal; Gabriele Aksomaityte; Paul O'Brien; Fei Cheng; Michael W. George; Andrew L. Hector; Steven M. Howdle; Jason R. Hyde; William Levason; Mohamed A. Malik; Kanad Mallik; Chinh Q. Nguyen; Gillian Reid; Pier Sazio; David C. Smith; Michael Webster; James W. Wilson; Jixin Yang; Wenjian Zhang

doi:10.1149/1.3207724

Supercritical chemical fluid deposition of high quality compound semiconductors

Mohammad Afzaal, Gabriele Aksomaityte, Paul O'Brien, Fei Cheng, Michael W. George, Andrew L. Hector, Steven M. Howdle, Jason R. Hyde, William Levason, Mohamed A. Malik, Kanad Mallik, Chinh Q. Nguyen, Gillian Reid, Pier Sazio, David C. Smith, Michael Webster, James W. Wilson, Jixin Yang, Wenjian Zhang

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

The main advantage of deposition from supercritical fluids over conventional CVD is the ability to fill high aspect ratio templates. Deposition of metals, indirect semiconductors and insulators into templates with dimensions down to 3 nm has been demonstrated by others, with no apparent pore blocking. In this paper we present a demonstration that it is also possible to deposit high quality, luminescent compound semiconductor films from supercritical CO₂or CO₂/hexane mixtures. Depositions of CdS and III-V materials such as InP have been achieved through careful optimisation of precursor chemistry, reactor geometry and deposition conditions, supported by detailed measurements of the semiconductor film properties.

Original language	English
Title of host publication	ECS Transactions - EuroCVD 17/CVD 17
Publisher	Electrochemical Society Inc.
Pages	1193-1197
Number of pages	5
Edition	8 PART 2
ISBN (Print)	9781566777452
DOIs	https://doi.org/10.1149/1.3207724
Publication status	Published - 2009
Externally published	Yes
Event	17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society - Vienna, Austria Duration: 4 Oct 2009 → 9 Oct 2009

Publication series

Name	ECS Transactions
Number	8 PART 2
Volume	25
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society
Country/Territory	Austria
City	Vienna
Period	4/10/09 → 9/10/09

ASJC Scopus subject areas

General Engineering

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10.1149/1.3207724

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Afzaal, M., Aksomaityte, G., O'Brien, P., Cheng, F., George, M. W., Hector, A. L., Howdle, S. M., Hyde, J. R., Levason, W., Malik, M. A., Mallik, K., Nguyen, C. Q., Reid, G., Sazio, P., Smith, D. C., Webster, M., Wilson, J. W., Yang, J., & Zhang, W. (2009). Supercritical chemical fluid deposition of high quality compound semiconductors. In ECS Transactions - EuroCVD 17/CVD 17 (8 PART 2 ed., pp. 1193-1197). (ECS Transactions; Vol. 25, No. 8 PART 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.3207724

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title = "Supercritical chemical fluid deposition of high quality compound semiconductors",

abstract = "The main advantage of deposition from supercritical fluids over conventional CVD is the ability to fill high aspect ratio templates. Deposition of metals, indirect semiconductors and insulators into templates with dimensions down to 3 nm has been demonstrated by others, with no apparent pore blocking. In this paper we present a demonstration that it is also possible to deposit high quality, luminescent compound semiconductor films from supercritical CO2or CO2/hexane mixtures. Depositions of CdS and III-V materials such as InP have been achieved through careful optimisation of precursor chemistry, reactor geometry and deposition conditions, supported by detailed measurements of the semiconductor film properties.",

author = "Mohammad Afzaal and Gabriele Aksomaityte and Paul O'Brien and Fei Cheng and George, {Michael W.} and Hector, {Andrew L.} and Howdle, {Steven M.} and Hyde, {Jason R.} and William Levason and Malik, {Mohamed A.} and Kanad Mallik and Nguyen, {Chinh Q.} and Gillian Reid and Pier Sazio and Smith, {David C.} and Michael Webster and Wilson, {James W.} and Jixin Yang and Wenjian Zhang",

note = "Copyright: Copyright 2010 Elsevier B.V., All rights reserved.; 17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society ; Conference date: 04-10-2009 Through 09-10-2009",

year = "2009",

doi = "10.1149/1.3207724",

language = "English",

isbn = "9781566777452",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "8 PART 2",

pages = "1193--1197",

booktitle = "ECS Transactions - EuroCVD 17/CVD 17",

edition = "8 PART 2",

}

Afzaal, M, Aksomaityte, G, O'Brien, P, Cheng, F, George, MW, Hector, AL, Howdle, SM, Hyde, JR, Levason, W, Malik, MA, Mallik, K, Nguyen, CQ, Reid, G, Sazio, P, Smith, DC, Webster, M, Wilson, JW, Yang, J & Zhang, W 2009, Supercritical chemical fluid deposition of high quality compound semiconductors. in ECS Transactions - EuroCVD 17/CVD 17. 8 PART 2 edn, ECS Transactions, no. 8 PART 2, vol. 25, Electrochemical Society Inc., pp. 1193-1197, 17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society, Vienna, Austria, 4/10/09. https://doi.org/10.1149/1.3207724

Supercritical chemical fluid deposition of high quality compound semiconductors. / Afzaal, Mohammad; Aksomaityte, Gabriele; O'Brien, Paul et al.
ECS Transactions - EuroCVD 17/CVD 17. 8 PART 2. ed. Electrochemical Society Inc., 2009. p. 1193-1197 (ECS Transactions; Vol. 25, No. 8 PART 2).

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Supercritical chemical fluid deposition of high quality compound semiconductors

AU - Afzaal, Mohammad

AU - Aksomaityte, Gabriele

AU - O'Brien, Paul

AU - Cheng, Fei

AU - George, Michael W.

AU - Hector, Andrew L.

AU - Howdle, Steven M.

AU - Hyde, Jason R.

AU - Levason, William

AU - Malik, Mohamed A.

AU - Mallik, Kanad

AU - Nguyen, Chinh Q.

AU - Reid, Gillian

AU - Sazio, Pier

AU - Smith, David C.

AU - Webster, Michael

AU - Wilson, James W.

AU - Yang, Jixin

AU - Zhang, Wenjian

PY - 2009

Y1 - 2009

N2 - The main advantage of deposition from supercritical fluids over conventional CVD is the ability to fill high aspect ratio templates. Deposition of metals, indirect semiconductors and insulators into templates with dimensions down to 3 nm has been demonstrated by others, with no apparent pore blocking. In this paper we present a demonstration that it is also possible to deposit high quality, luminescent compound semiconductor films from supercritical CO2or CO2/hexane mixtures. Depositions of CdS and III-V materials such as InP have been achieved through careful optimisation of precursor chemistry, reactor geometry and deposition conditions, supported by detailed measurements of the semiconductor film properties.

AB - The main advantage of deposition from supercritical fluids over conventional CVD is the ability to fill high aspect ratio templates. Deposition of metals, indirect semiconductors and insulators into templates with dimensions down to 3 nm has been demonstrated by others, with no apparent pore blocking. In this paper we present a demonstration that it is also possible to deposit high quality, luminescent compound semiconductor films from supercritical CO2or CO2/hexane mixtures. Depositions of CdS and III-V materials such as InP have been achieved through careful optimisation of precursor chemistry, reactor geometry and deposition conditions, supported by detailed measurements of the semiconductor film properties.

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SP - 1193

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BT - ECS Transactions - EuroCVD 17/CVD 17

PB - Electrochemical Society Inc.

T2 - 17th International Chemical Vapor Deposition Symposium (CVD-XVII) - 216th Meeting of the Electrochemical Society

Y2 - 4 October 2009 through 9 October 2009

ER -

Supercritical chemical fluid deposition of high quality compound semiconductors

Abstract

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