@inproceedings{14f048a8949a4ba1b995b42fa25ce2e9,
title = "Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes",
abstract = "The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results.",
author = "Andrew Trentin and David Hind and Marco Degano and Christopher Tighe and Arevalo, {Saul Lopez} and Li Yang and Mark Johnson and Pat Wheeler and Christopher Gerada and Anne Harris and Matthew Packwood",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018 ; Conference date: 23-09-2018 Through 27-09-2018",
year = "2018",
month = dec,
day = "3",
doi = "10.1109/ECCE.2018.8557415",
language = "English",
series = "2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1829--1836",
booktitle = "2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018",
address = "United States",
}