Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes

Andrew Trentin, David Hind, Marco Degano, Christopher Tighe, Saul Lopez Arevalo, Li Yang, Mark Johnson, Pat Wheeler, Christopher Gerada, Anne Harris, Matthew Packwood

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results.

Original languageEnglish
Title of host publication2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1829-1836
Number of pages8
ISBN (Electronic)9781479973118
DOIs
Publication statusPublished - 3 Dec 2018
Externally publishedYes
Event10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018 - Portland, United States
Duration: 23 Sep 201827 Sep 2018

Publication series

Name2018 IEEE Energy Conversion Congress and Exposition, ECCE 2018

Conference

Conference10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018
Country/TerritoryUnited States
CityPortland
Period23/09/1827/09/18

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Control and Optimization
  • Computer Networks and Communications
  • Hardware and Architecture
  • Information Systems and Management

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