TY - JOUR
T1 - Simultaneous distillation-extraction for manufacturing ultra-high-purity electronic-grade octamethylcyclotetrasiloxane (D4)
AU - Guo, Wenhui
AU - Guo, Shuhu
AU - Zhao, Xu
AU - Yuan, Zhenjun
AU - Zhao, Yu
AU - Chang, Xin
AU - Li, Hong
AU - Zhao, Xiong
AU - Wan, Ye
AU - Yan, Dazhou
AU - Ren, Zhongyuan
AU - Fan, Xiaolei
AU - Gao, Xin
N1 - Publisher Copyright:
© 2022 The Korean Society of Industrial and Engineering Chemistry
PY - 2022/5/25
Y1 - 2022/5/25
N2 - Ultra-high-purity (UHP) electronic-grade octamethylcyclotetrasiloxane (D4) is the key precursor of low-dielectric constant (low-k) SiCOH films to manufacture integrated circuits (IC), meeting the stringent requirements of the rapidly developing semiconductor industry. Commonly, metallic impurities in D4 were removed by multiple unit operations of adsorption, filtration, and distillation, which could reduce the concentration of a single metallic impurity below 1 ppb. However, D4 with higher purity is required by semiconductor production due to an increase in transistor density. Herein, a novel method based on the integrated simultaneous distillation–extraction (SDE) was developed for manufacturing UHP electronic-grade D4. The lab and pilot scale experiments showed that the purity of water and D4 has a positive correlation. Based on the experimental data, a double-column process, consisting of azeotropic/extractive distillation column and precision distillation column with UNIQUAC method, was established to access the feasibility of scaling up the SDE process. According to the simulation results, D4 with the purity > 99.999 wt.% and total metallic impurities (TMI) content below 1 ppb could be obtained using ultra-pure water.
AB - Ultra-high-purity (UHP) electronic-grade octamethylcyclotetrasiloxane (D4) is the key precursor of low-dielectric constant (low-k) SiCOH films to manufacture integrated circuits (IC), meeting the stringent requirements of the rapidly developing semiconductor industry. Commonly, metallic impurities in D4 were removed by multiple unit operations of adsorption, filtration, and distillation, which could reduce the concentration of a single metallic impurity below 1 ppb. However, D4 with higher purity is required by semiconductor production due to an increase in transistor density. Herein, a novel method based on the integrated simultaneous distillation–extraction (SDE) was developed for manufacturing UHP electronic-grade D4. The lab and pilot scale experiments showed that the purity of water and D4 has a positive correlation. Based on the experimental data, a double-column process, consisting of azeotropic/extractive distillation column and precision distillation column with UNIQUAC method, was established to access the feasibility of scaling up the SDE process. According to the simulation results, D4 with the purity > 99.999 wt.% and total metallic impurities (TMI) content below 1 ppb could be obtained using ultra-pure water.
KW - Electronic-Grade
KW - Octamethylcyclotetrasiloxane (D4)
KW - Process integration
KW - Simultaneous distillation-extraction
UR - http://www.scopus.com/inward/record.url?scp=85125354279&partnerID=8YFLogxK
U2 - 10.1016/j.jiec.2022.02.015
DO - 10.1016/j.jiec.2022.02.015
M3 - Article
AN - SCOPUS:85125354279
SN - 1226-086X
VL - 109
SP - 275
EP - 286
JO - Journal of Industrial and Engineering Chemistry
JF - Journal of Industrial and Engineering Chemistry
ER -