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Side gating in silicon germanium hetero-dimensional field effect transistors
Tongwei Cheng,
J. C. Greer
Research output
:
Journal Publication
›
Article
›
peer-review
2
Citations (Scopus)
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Engineering & Materials Science
Germanium
100%
Field effect transistors
79%
Semiconductor quantum wires
59%
Silicon
58%
Semiconductor quantum wells
46%
Gases
34%
Electron gas
27%
Strained silicon
24%
Charge carriers
22%
Silicon oxides
21%
Substrates
21%
Heterojunctions
19%
High electron mobility transistors
17%
Electrons
15%
Fabrication
11%
Simulators
10%
Metals
9%
Physics & Astronomy
germanium
66%
field effect transistors
58%
silicon
40%
quantum wires
23%
gases
21%
quantum wells
16%
profiles
11%
simulators
10%
metal oxides
10%
electrical measurement
10%
electron gas
10%
manipulators
9%
depletion
9%
charge carriers
9%
simulation
8%
fabrication
6%
electrons
4%
Chemical Compounds
Field Effect
74%
Hole Gas
51%
Electron Gas
19%
Simulation
15%
Spreading
13%
Gas
13%
Charge Carrier
11%
Electron Particle
6%