Properties of the interfacial layer in the high-k gate stack and transistor performance

G. Bersuker, J. Peterson, J. Barnett, A. Korkin, J. H. Sim, R. Choi, B. H. Lee, J. Greer, P. Lysaght, H. R. Huff

Research output: Contribution to conferencePaperpeer-review

13 Citations (Scopus)


Effect of the ALD HfO 2 film on the structural and electrical properties of the underlying interfacial SiO 2 layer is discussed. It is shown that the k value of the interfacial layer is increased, which may be caused by the removal of oxygen atom from the oxide region near its interface with the Si substrate. The data indicates that the low temperature chemical oxide may be less stable than thermal oxide with respect to oxygen removal. Chemical oxide interfacial layer exhibits higher density of the fixed charge compared with thermal oxide that correlates to lower mobility observed in the gate stack with the chemical oxide interface.

Original languageEnglish
Number of pages5
Publication statusPublished - 2005
Externally publishedYes
Event207th ECS Meeting - Quebec, Canada
Duration: 16 May 200520 May 2005


Conference207th ECS Meeting

ASJC Scopus subject areas

  • General Engineering


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