Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

Hirofumi Akagi, Tatsuya Yamagishi, Nadia M.L. Tan, Shin Ichi Kinouchi, Yuji Miyazaki, Masato Koyama

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

25 Citations (Scopus)

Abstract

This paper describes the design, construction and testing of a 750-V, 100-kW, 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiCMOSFET/SBD dual modules. The maximum conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be as high as 98.7% at 42-kW operation. The overall power loss at the rated-power (100 kW) operation, excluding the gate-drive and control circuit losses, is divided into conduction and switching losses produced by the SiC modules, iron and copper losses due to magnetic devices, and an unknown loss. The power-loss breakdown concludes that the summation of the conduction and switching losses is about 60% of the overall power loss, and that the conduction loss is nearly equal to the switching loss at the 20-kHz, 100-kW operation.

Original languageEnglish
Title of host publication2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
PublisherIEEE Computer Society
Pages750-757
Number of pages8
ISBN (Print)9781479927050
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 - Hiroshima, Japan
Duration: 18 May 201421 May 2014

Publication series

Name2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

Conference

Conference7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
Country/TerritoryJapan
CityHiroshima
Period18/05/1421/05/14

Keywords

  • Bidirectional isolated dc-dc converters
  • conversion efficiency
  • dual-active-bridge configuration
  • SiC-MOSFET

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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