Piezo-phototronic effect on electroluminescence properties of p-type GaN thin films

Keyphrases

• Electroluminescence Properties 100%
• Piezo-phototronic Effect 100%
• P-GaN 100%
• GaN Thin Film 100%
• Minority Carrier Injection 66%
• Metal-semiconductor Contact 66%
• GaN Films 66%
• Acceptor States 66%
• Indium Tin Oxide 66%
• Carrier Injection Efficiency 66%
• Order of Magnitude 33%
• Light-emitting Diodes 33%
• Induced Polarization 33%
• Work Environment 33%
• Strain-induced 33%
• External Quantum Efficiency 33%
• Mg Doping 33%
• Electroluminescence 33%
• Transport Properties 33%
• Mechanical Deformation 33%
• Piezoelectric Charges 33%
• Applied Strain 33%
• C-axis Orientation 33%
• Metal-semiconductor-metal Structure 33%
• Electroluminescence Intensity 33%
• Deep-blue Electroluminescence 33%
• Polarization Charge 33%
• Shallow Acceptor 33%
• Deep Acceptor 33%

Material Science

• Thin Films 100%
• Electroluminescence 100%
• Film 60%
• Indium Tin Oxide 40%
• Light-Emitting Diode 20%
• Piezoelectricity 20%
• Mechanical Deformation 20%