A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the SiGa-H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of CAs-H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds.
|Number of pages||6|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - Jan 2002|
- Gallium arsenide
- Hydrogen passivation
ASJC Scopus subject areas
- Nuclear and High Energy Physics