Abstract
A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the SiGa-H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of CAs-H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds.
Original language | English |
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Pages (from-to) | 234-239 |
Number of pages | 6 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 186 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - Jan 2002 |
Externally published | Yes |
Keywords
- Gallium arsenide
- Hydrogen passivation
- Photo-dissociation
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation