Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers

Giuseppe Alessio Verni, Brenda Long, Farzan Gity, Martin Lanius, Peter Schüffelgen, Gregor Mussler, Detlev Grützmacher, Jim Greer, Justin D. Holmes

Research output: Journal PublicationArticlepeer-review

4 Citations (Scopus)

Abstract

Bismuth has been identified as a material of interest for electronic applications due to its extremely high electron mobility and quantum confinement effects observed at nanoscale dimensions. However, it is also the case that Bi nanostructures are readily oxidised in ambient air, necessitating additional capping steps to prevent surface re-oxidation, thus limiting the processing potential of this material. This article describes an oxide removal and surface stabilization method performed on molecular beam epitaxy (MBE) grown bismuth thin-films using ambient air wet-chemistry. Alkanethiol molecules were used to dissolve the readily formed bismuth oxides through a catalytic reaction; the bare surface was then reacted with the free thiols to form an organic layer which showed resistance to complete reoxidation for up to 10 days.

Original languageEnglish
Pages (from-to)33368-33373
Number of pages6
JournalRSC Advances
Volume8
Issue number58
DOIs
Publication statusPublished - 2018

ASJC Scopus subject areas

  • Chemistry (all)
  • Chemical Engineering (all)

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