Modelling of Sb activation in ultra-shallow junction regions in bulk and strained Si

The activation behaviour of dopants in ultra-shallow junctions on strained silicon is investigated from a simulation vantage point. Process models available in commercial simulation tools are typically developed for junctions formed with high implantation energies (< 50 keV) and for long anneal times. Hence the question arises as to whether these models and parameter sets can accurately predict the active profile for highly doped, ultra-shallow junctions formed thin strained silicon layers using short rapid thermal anneals (RTA, <10 seconds) at temperatures below 800 °C. By incorporating the results from experimental data, we develop modified models allowing for improved predictions of antimony activation within both bulk and strained silicon.