Layer-by-layer epitaxial growth of monoclinic SrIrO3 thin films on (111)-oriented SrTiO3 through interface engineering

Xuan Zheng, Shuai Kong, Jin Zhu, Jiatai Feng, Zengxing Lu, Haifeng Du, Binghui Ge, Tao Wu, Zhiming Wang, Milan Radovic, Run Wei Li

    Research output: Journal PublicationArticlepeer-review

    2 Citations (Scopus)


    When transition metal oxides is grown along (111) direction, a variety of intriguing phenomena is expected to arise. One of important system, SrIrO3, crystallizes into monoclinic hexagonal-based 6M structure when grown on (111)-oriented perovskite SrTiO3, and is expected to host novel topological states. However, the growth of high quality SrIrO3 on (111)-oriented substrate is still a challenge. We report on high-quality layer-by-layer epitaxial growth of monoclinic SrIrO3 on SrTiO3(111) substrate by inserting the CaTiO3 buffer layer. The scanning transmission electron microscopy image shows perfect epitaxial growth of monoclinic SrIrO3. Reflection high-energy electron diffraction and low-energy electron diffraction patterns exhibit smooth film surface with reconstruction. Inserting CaTiO3 buffer layer proves to be an effective way of interface engineering in realizing layer-by-layer growth by reducing the lattice mismatch. The study paves way for the future research on novel quantum states in monoclinic SrIrO3 films and heterostructures.

    Original languageEnglish
    Article number138119
    JournalThin Solid Films
    Publication statusPublished - 1 Sept 2020


    • Interface engineering
    • Oxide thin films
    • Pulsed laser deposition
    • Strontium iridium trioxide

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry


    Dive into the research topics of 'Layer-by-layer epitaxial growth of monoclinic SrIrO3 thin films on (111)-oriented SrTiO3 through interface engineering'. Together they form a unique fingerprint.

    Cite this