Impact of Metal Hybridization on Contact Resistance and Leakage Current of Carbon Nanotube Transistors

Sheng Kai Su, Alfonso Sanchez-Soares, Edward Chen, Thomas Kelly, Giorgos Fagas, James C. Greer, Gregory Pitner, H. S.Philip Wong, Iuliana P. Radu

Research output: Journal PublicationArticlepeer-review

Abstract

Carbon nanotube field effect transistors (CNFETs) have potential applications in future logic technology as they display good electrostatic control and excellent transport properties. However, contact resistance and leakage currents could limit scaling of CNFETs. Non-equilibrium Green's function (NEGF) simulation investigates that coupling between contact metal and CNT impacts both contact resistance and leakage current. The physical mechanisms underlying the effects are analyzed. A model with calibrated metal coupling strength from experimental data projects ION-IOFF design space to understand the trade-off between shrinking contact and extension lengths. For CNT with diameter of 1 nm, both contact and extension lengths greater than 8 nm are a good compromise between ION and IOFF for digital logic in advanced technology nodes.

Original languageEnglish
Pages (from-to)1367-1370
Number of pages4
JournalIEEE Electron Device Letters
Volume43
Issue number8
DOIs
Publication statusPublished - 1 Aug 2022

Keywords

  • Carbon nanotube (CNT)
  • CMOS scaling
  • contact resistance
  • leakage current
  • metal hybridization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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