Heterodimensional FET with split drain

Tongwei Cheng, A. Mathewson, M. P. Kennedy, J. C. Greer

Research output: Journal PublicationArticlepeer-review

2 Citations (Scopus)


A modification to heterodimensional field effect transistors (HDFET) is introduced and demonstrated to provide novel switching capabilities. The modification consists of introducing a split drain into the HDFET structure allowing the transistor to operate as a single pole-double throw switch. By extension, multiple pole-multiple throw switches can be made within a single transistor structure by introduction of multiple split drains or sources. If the device is fabricated on silicon germanium substrates, compatibility of the structure with conventional CMOS processing is achievable, allowing for new applications in digital, mixed signal, and high voltage switching.

Original languageEnglish
Pages (from-to)737-739
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
Publication statusPublished - Nov 2004
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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