Evaluation of SiC and GaN technologies for a full-bridge grid-connected converter through a comprehensive performance index

Michael Prantner, Giampaolo Buticchi, Marco Liserre

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

Wide bandgap semiconductors are promising regarding loss reduction and increase of switching frequency. In the specific case of two level power converter it has not been up to now clearly shown the potential of SiC and GaN in comparison with Si semiconductors. In this paper, a multi-variable analysis for different devices is carried out, considering system efficiency, heatsink size and output filter design. The results are condensed in a performance index, that allows comparing different solutions.

Original languageEnglish
Title of host publication2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9789075815276
DOIs
Publication statusPublished - 6 Nov 2017
Externally publishedYes
Event19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe - Warsaw, Poland
Duration: 11 Sep 201714 Sep 2017

Publication series

Name2017 19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe
Volume2017-January

Conference

Conference19th European Conference on Power Electronics and Applications, EPE 2017 ECCE Europe
Country/TerritoryPoland
CityWarsaw
Period11/09/1714/09/17

Keywords

  • Device characterisation
  • Efficiency
  • Gallium Nitride (GaN)
  • Silicon Carbide (SiC)
  • Wide bandgap devices

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering
  • Energy Engineering and Power Technology

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