Effect of semiconductor parasitic capacitances on ground leakage current in three-phase current source inverters

Giovanni Migliazza, Emilio Carfagna, Giampaolo Buticchi, Fabio Immovilli, Emilio Lorenzani

    Research output: Journal PublicationArticlepeer-review

    1 Citation (Scopus)

    Abstract

    This paper investigates the influence of power semiconductor parasitic components on the ground leakage current in the three-phase Current Source Inverter topology, in the literature called H7 or CSI7. This topology allows reducing converter conduction losses with respect to the classic CSI, but at the same time makes the topology more susceptible to the parasitic capacitances of the semiconductors devices. In the present work, a grid-connected converter for photovoltaic power systems is considered as a case study, to investigate the equivalent circuit for ground leakage current. The same analysis can be extended to applications regarding electric drives, since the HF model of electric machines is characterized by stray capacitance between windings and the stator slots/motor frame. Simulation results proved the correctness of the proposed simplified common-mode circuit and highlighted the need of an additional common-mode inductor filter in case of resonance frequencies of the common-mode circuit close to harmonics of the power converter switching frequency. Experimental results are in agreement with the theoretical analysis.

    Original languageEnglish
    Article number7364
    JournalEnergies
    Volume14
    Issue number21
    DOIs
    Publication statusPublished - 1 Nov 2021

    Keywords

    • Common mode
    • Current source inverter
    • Ground leakage current
    • Parasitic capacitance
    • Photovoltaic

    ASJC Scopus subject areas

    • Renewable Energy, Sustainability and the Environment
    • Fuel Technology
    • Energy Engineering and Power Technology
    • Energy (miscellaneous)
    • Control and Optimization
    • Electrical and Electronic Engineering

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