Design and optimisation of high-brightness 980 nm laser diodes with distributed phase correction

Y. Zhang, J. J. Lim, T. M. Benson, P. Sewell, S. Dods, B. C. Larkins

Research output: Journal PublicationArticlepeer-review


Designs for 980 nm AlxGa1-xAs/In0.2Ga0.8As/GaAs high-power, high-brightness semiconductor lasers/amplifiers with distributed phase correction and short-cavity lengths (i.e. cavity lengths 560 - 1040 μm) are presented. The proposed lasers/amplifiers employ a single mode feed waveguide coupled to a power amplifier with a laterally graded effective refractive index (GRIN) profile to control the lateral mode shape and phase. The lateral index of the power amplifier has a hyperbolic secant (HYSEC) profile, which can be approximately realised by tailoring the effective refractive index of the amplifier using a series of discrete etches. The epitaxial and structure designs of the laterally discretised GRIN lasers/ amplifiers are presented. Finally, a method for improving the effective refractive index discretisation is described.

Original languageEnglish
Pages (from-to)887-901
Number of pages15
JournalOptical and Quantum Electronics
Issue number9
Publication statusPublished - Jul 2003
Externally publishedYes


  • Astigmatism
  • Graded index
  • Laser amplifiers
  • Laser diodes
  • M

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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