Deposition of bismuth sulfide and aluminum doped bismuth sulfide thin films for photovoltaic applications

Tanzeela Fazal, Shahid Iqbal, Mazloom Shah, Ali Bahadur, Bushra Ismail, Hisham S.M. Abd-Rabboh, Rabia Hameed, Qaiser Mahmood, Aliya Ibrar, Muhammad Sufyan Nasar, Yasir Ehsan, Ahmad Nauman Shah Saqib, Adnan, Muhammad Abdul Qayyum

Research output: Journal PublicationArticlepeer-review

12 Citations (Scopus)


Binary bismuth sulfide (Bi2S3) and ternary aluminum-doped bismuth sulfide (Al@Bi2S3) thin films were prepared by the chemical bath deposition method for photovoltaic applications. The newly designed materials synthesized at room temperature were thoroughly analyzed by several characterization techniques i.e., X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, optical absorption, thickness measurement, and Hall effect techniques. Correlation between structural, morphological, optical, electrical, and transport properties was evaluated. The parent material i.e., Bi2S3 is reported to have an orthorhombic phase, while doped derivatives revealed the amorphous phase. Optical band gaps in the range of 1.6–1.3 eV and absorption coefficients were found in the range of 104 to 106 cm−1. The thickness of the films changed with the change in the composition of the solution matrix and the films were well adhered, compact, and crack free. Hall measurements show that the dominant carriers in all studied compounds were electrons and that the carrier density for ternary films is almost two orders of magnitude greater than binary Bi2S3. The disorderliness in these newly designed materials is traced through the estimation of the change in the Urbach energy.

Original languageEnglish
Pages (from-to)42-53
Number of pages12
JournalJournal of Materials Science: Materials in Electronics
Issue number1
Publication statusPublished - Jan 2022
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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