Deformation potentials and electron-phonon coupling in silicon nanowires

F. Murphy-Armando, G. Fagas, J. C. Greer

Research output: Journal PublicationArticlepeer-review

54 Citations (Scopus)

Abstract

The role of reduced dimensionality and of the surface on electron-phonon (e-ph) coupling in silicon nanowires is determined from first principles. Surface termination and chemistry is found to have a relatively small influence, whereas reduced dimensionality fundamentally alters the behavior of deformation potentials. As a consequence, electron coupling to "breathing modes" emerges that cannot be described by conventional treatments of e-ph coupling. The consequences for physical properties such as scattering lengths and mobilities are significant: the mobilities for [ 110] grown wires are 6 times larger than those for [ 100] wires, an effect that cannot be predicted without the form we find for Si nanowire deformation potentials.

Original languageEnglish
Pages (from-to)869-873
Number of pages5
JournalNano Letters
Volume10
Issue number3
DOIs
Publication statusPublished - 10 Mar 2010
Externally publishedYes

Keywords

  • Deformation potentials
  • Electron-phonon
  • Mobility
  • Relaxation time
  • Silicon nanowire

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry (all)
  • Materials Science (all)
  • Condensed Matter Physics
  • Mechanical Engineering

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