Ballistic conductance in oxidized si nanowires

Giorgos Fagas, James C. Greer

Research output: Journal PublicationArticlepeer-review

36 Citations (Scopus)


The influence of local oxidation in silicon nanowires on hole transport, and hence the effect of varying the oxidation state of silicon atoms at the wire surface, is studied using density functional theory in conjunction with a Green's function scattering method. For silicon nanowires with growth direction along [110] and diameters of a few nanometers, it is found that the introduction of oxygen bridging and back bonds does not significantly degrade hole transport for voltages up to several hundred millivolts relative to the valence band edge. As a result, the mean free paths are comparable to or longer than the wire lengths envisioned for transistor and other nanoelectronics applications. Transport along [100]-oriented nanowires is less favorable, thus providing an advantage in terms of hole mobilities for [110] nanowire orientations, as preferentially produced in some growth methods.

Original languageEnglish
Pages (from-to)1856-1860
Number of pages5
JournalNano Letters
Issue number5
Publication statusPublished - 13 May 2009
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry (all)
  • Materials Science (all)
  • Condensed Matter Physics
  • Mechanical Engineering


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